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DiodesZetex P-Channel MOSFET, 6 A Continuous Drain Current, 40 V Voltage, Enhancement Mode, 6-Pin UDFN Package DMP4047LFDE-7

Category MOSFET Brand DiodesZetex Condition New

Specifications

Country of Origin China
Brand DiodesZetex
Height 580μm
Length 2.05mm
Model DMP4047LFDE-7
Width 2.05mm
Mount Type Surface
Series DMP
Maximum Operating Temperature 150°C
Package Type UDFN
Minimum Operating Temperature -55°C
Pin Count 6
Automotive Standard AEC-Q101
Channel Type Type P
Maximum Continuous Drain Current Id 6A
Maximum Drain Source Voltage Vds 40V
Maximum Drain Source Resistance Rds 50mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 2.1W
Typical Gate Charge Qg @ Vgs 23.2nC
Maximum Gate Source Voltage Vgs -20, +20V
Forward Voltage Vf -1.2V

Key Features

  • Supports a maximum continuous drain current of 6 amperes for efficient power control.
  • Compact dimensions of 2.05 mm length and width with 580 micrometers height.
  • Operating temperature range from -55°C to 150°C for robust industrial usage.
  • Maximum power dissipation of 2.1 watts to handle moderate thermal loads.
  • Features a typical gate charge of 23.2 nanocoulombs ensuring fast switching.
  • Designed with automotive standard compliance to AEC-Q101 for reliability.
  • Surface mount package type enhances PCB layout flexibility.
  • Maximum gate-source voltage swings from -20 V to +20 V.

Product Description

DiodesZetex DMP4047LFDE-7 is a high-performance P-Channel MOSFET designed for efficient power management in industrial, automotive, and electronic applications. With a continuous drain current of 6 amperes and maximum drain-source voltage of 40 volts, it suits medium power switching tasks.

The device is housed in a compact 6-pin UDFN surface mount package measuring 2.05 mm by 2.05 mm and stands 580 micrometers tall, enabling space-saving PCB designs. Its low maximum drain-source resistance (Rds) of 50 milliohms reduces conduction losses and improves efficiency.

Featuring an enhancement mode channel with a gate-source voltage range of -20 V to +20 V, the MOSFET supports high-speed switching with a typical gate charge of 23.2 nC. Its maximum power dissipation rating of 2.1 W allows for stable operation under moderate thermal conditions, supported by an operating temperature range from -55°C up to 150°C.

Certified to meet automotive standard AEC-Q101, this MOSFET is suitable for use in automotive electronics, industrial control systems, and power management circuits requiring durable components. The P-Channel type provides flexibility in low-side switching and load control applications.

Supports a maximum continuous drain current of 6 amperes for efficient power control. Voltage rating up to 40 volts with a low maximum drain-source resistance of 50 milliohms. Compact dimensions of 2.05 mm length and width with 580 micrometers height.

Operating temperature range from -55°C to 150°C for robust industrial usage. Maximum power dissipation of 2.1 watts to handle moderate thermal loads. Features a typical gate charge of 23.2 nanocoulombs ensuring fast switching.

Designed with automotive standard compliance to AEC-Q101 for reliability. Surface mount package type enhances PCB layout flexibility. Maximum gate-source voltage swings from -20 V to +20 V. Suitable for industrial, automotive, and commercial semiconductor power management.

The MOSFET package is optimized for automated PCB assembly workflows, supplied in tape form for readiness in production. Its country of origin is China. Explore more semiconductor and MOSFET options in the Electronics & Electricals category on EnvMart.

DiodesZetex P-Channel MOSFET, 6 A Continuous Drain Current, 40 V Voltage, Enhancement Mode, 6-Pin UDFN Package DMP4047LFDE-7
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Frequently Asked Questions

The maximum continuous drain current for this model is 6 amperes.

It has a maximum drain-source voltage rating of 40 volts.

This model has compact dimensions of 2.05 mm in length and width, with a height of 580 micrometers.

The operating temperature range is from -55°C to 150°C.

It has a maximum power dissipation rating of 2.1 watts.

The typical gate charge is 23.2 nanocoulombs.

It is housed in a 6-pin UDFN surface mount package.

This P-Channel MOSFET is designed to comply with the automotive standard AEC-Q101.

The maximum gate-source voltage swings from -20 V to +20 V.

It features a low maximum drain-source resistance of 50 milliohms.

This model is suitable for industrial, automotive, and commercial semiconductor power management applications.

The country of origin for this MOSFET is China.

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