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| Country of Origin | China |
|---|---|
| Brand | DiodesZetex |
| Height | 580μm |
| Length | 2.05mm |
| Model | DMP4047LFDE-7 |
| Width | 2.05mm |
| Mount Type | Surface |
| Series | DMP |
| Maximum Operating Temperature | 150°C |
| Package Type | UDFN |
| Minimum Operating Temperature | -55°C |
| Pin Count | 6 |
| Automotive Standard | AEC-Q101 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 6A |
| Maximum Drain Source Voltage Vds | 40V |
| Maximum Drain Source Resistance Rds | 50mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 2.1W |
| Typical Gate Charge Qg @ Vgs | 23.2nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | -1.2V |
DiodesZetex DMP4047LFDE-7 is a high-performance P-Channel MOSFET designed for efficient power management in industrial, automotive, and electronic applications. With a continuous drain current of 6 amperes and maximum drain-source voltage of 40 volts, it suits medium power switching tasks.
The device is housed in a compact 6-pin UDFN surface mount package measuring 2.05 mm by 2.05 mm and stands 580 micrometers tall, enabling space-saving PCB designs. Its low maximum drain-source resistance (Rds) of 50 milliohms reduces conduction losses and improves efficiency.
Featuring an enhancement mode channel with a gate-source voltage range of -20 V to +20 V, the MOSFET supports high-speed switching with a typical gate charge of 23.2 nC. Its maximum power dissipation rating of 2.1 W allows for stable operation under moderate thermal conditions, supported by an operating temperature range from -55°C up to 150°C.
Certified to meet automotive standard AEC-Q101, this MOSFET is suitable for use in automotive electronics, industrial control systems, and power management circuits requiring durable components. The P-Channel type provides flexibility in low-side switching and load control applications.
Supports a maximum continuous drain current of 6 amperes for efficient power control. Voltage rating up to 40 volts with a low maximum drain-source resistance of 50 milliohms. Compact dimensions of 2.05 mm length and width with 580 micrometers height.
Operating temperature range from -55°C to 150°C for robust industrial usage. Maximum power dissipation of 2.1 watts to handle moderate thermal loads. Features a typical gate charge of 23.2 nanocoulombs ensuring fast switching.
Designed with automotive standard compliance to AEC-Q101 for reliability. Surface mount package type enhances PCB layout flexibility. Maximum gate-source voltage swings from -20 V to +20 V. Suitable for industrial, automotive, and commercial semiconductor power management.
The MOSFET package is optimized for automated PCB assembly workflows, supplied in tape form for readiness in production. Its country of origin is China. Explore more semiconductor and MOSFET options in the Electronics & Electricals category on EnvMart.
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