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DiodesZetex Type P-Channel MOSFET 5 A, 30 V Enhancement Mode, 6-Pin SOT-26 Package DMP3056LDM-7

Category MOSFET Brand DiodesZetex Condition New

Specifications

Country of Origin China
Brand DiodesZetex
Height 1.3mm
Length 3.1mm
Model DMP3056LDM-7
Width 1.7mm
Mount Type Surface
Series DMP3056LDM
Maximum Operating Temperature 150°C
Package Type SOT-26
Minimum Operating Temperature -55°C
Pin Count 6
Automotive Standard AEC-Q101
Channel Type Type P
Maximum Continuous Drain Current Id 5A
Maximum Drain Source Voltage Vds 30V
Maximum Drain Source Resistance Rds 65mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 1.25W
Typical Gate Charge Qg @ Vgs 21.1nC
Maximum Gate Source Voltage Vgs -20, +20V
Forward Voltage Vf -1.2V

Key Features

  • The device operates effectively from -55°C to 150°C temperature range.
  • Maximum drain-source resistance is 65 milliohms ensuring efficient conduction.
  • Capable of dissipating power up to 1.25 watts during operation.
  • Typical gate charge at Vgs is 21.1 nanocoulombs suitable for rapid switching.
  • Designed for automotive use and complies with AEC-Q101 standard for reliability.
  • Extremely compact dimensions with 3.1mm length, 1.7mm width, and 1.3mm height.
  • Supports gate-source voltage swings from -20V to +20V.
  • Forward voltage drop is optimized at -1.2 volts for minimal loss.

Product Description

DiodesZetex DMP3056LDM-7 is a high-performance P-Channel MOSFET designed for applications requiring moderate current and voltage handling capabilities. Featuring a maximum continuous drain current rating of 5 amperes and drain-source voltage rating of 30 volts, this device suits a variety of electronic power switching and amplification tasks.

Constructed with an enhancement mode channel configuration, the MOSFET operates efficiently over a broad temperature range from -55 degrees Celsius up to 150 degrees Celsius, making it reliable for both industrial and automotive environments. Its low maximum drain-source resistance of 65 milliohms ensures minimal conduction losses while dissipating a maximum power of 1.25 watts.

The typical gate charge of 21.1 nanocoulombs at the specified gate-to-source voltage allows for rapid switching speeds, beneficial in high-frequency power electronics circuits. The package is a compact 6-pin SOT-26 surface mount type which fits well within dense PCB designs, supporting space-efficient assembly processes.

Additional features include compliance with the automotive AEC-Q101 standard, attesting to the device's robustness and suitability for automotive electronics applications. The compact physical dimensions measure 3.1 mm in length, 1.7 mm in width, and 1.3 mm in height, facilitating integration into miniature modules.

Applications include power management in industrial electronics, automotive control units, consumer electronics, and general purpose amplification and switching. The device is manufactured in China under strict quality controls ensuring consistent performance.

The device operates effectively from -55°C to 150°C temperature range. Maximum drain-source resistance is 65 milliohms ensuring efficient conduction. Capable of dissipating power up to 1.25 watts during operation. Typical gate charge at Vgs is 21.1 nanocoulombs suitable for rapid switching.

Designed for automotive use and complies with AEC-Q101 standard for reliability. Extremely compact dimensions with 3.1mm length, 1.7mm width, and 1.3mm height. Supports gate-source voltage swings from -20V to +20V. Forward voltage drop is optimized at -1.2 volts for minimal loss.

Package type SOT-26 facilitates surface mount assembly for space-saving PCB layouts. Explore more electronic components like MOSFETs and discrete semiconductors within the DiodesZetex product range on EnvMart.

DiodesZetex Type P-Channel MOSFET 5 A, 30 V Enhancement Mode, 6-Pin SOT-26 Package DMP3056LDM-7
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Frequently Asked Questions

The maximum continuous drain current for this model is 5 amperes.

This MOSFET has a maximum drain-source voltage rating of 30 volts.

It operates effectively within a temperature range of -55°C to 150°C.

The device is capable of dissipating a maximum power of 1.25 watts during operation.

The dimensions of this model are 3.1 mm in length, 1.7 mm in width, and 1.3 mm in height.

The maximum drain-source resistance is 65 milliohms, ensuring efficient conduction.

The typical gate charge at Vgs is 21.1 nanocoulombs, suitable for rapid switching.

This model comes in a 6-pin SOT-26 surface mount package type.

It complies with the AEC-Q101 standard, which is relevant for automotive applications.

The forward voltage drop is optimized at -1.2 volts for minimal loss.

This model supports gate-source voltage swings from -20V to +20V.

It utilizes a P-Channel enhancement mode configuration.

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