$2.75
$2.67
Tax included
Previous
Next
Share
Free Delivery in India | Lowest Global Shipping Charges
24/7 Customer Support
Shop with confidence knowing that our 24/7 Customer Support is always available to assist with any inquiries
Save up to 28% with GST Input
Avail maximum benefits from input tax mechanism on all your Business Invoices. Get GST Invoices on your business purchases. And 0% Taxes on all worldwide deliveries
# Lowest Price Challenge
If you find this product anywhere at lower cost than us. Call us and we will not only match the price but also give a complimentary coupon
100% Original Products
Shop with assurance, as each product we offer is 100% original, ensuring quality and authenticity with every purchase
Infineon CoolMOS C3 N-Channel MOSFET 11 A 800 V Enhancement Mode 3-Pin TO-220 SPP11N80C3XKSA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 9.45mm |
| Length | 10.36mm |
| Model | SPP11N80C3XKSA1 |
| Width | 4.57mm |
| Mount Type | Through Hole |
| Series | CoolMOS C3 |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 11A |
| Maximum Drain Source Voltage Vds | 800V |
| Maximum Drain Source Resistance Rds | 450mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 156W |
| Typical Gate Charge Qg @ Vgs | 64nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.2V |
Key Features
- Maximum continuous drain current of 11 amperes for robust performance.
- Maximum drain-source voltage of 800 volts suitable for high voltage applications.
- 3-pin TO-220 package with through-hole mounting for easy integration.
- Low typical gate charge of 64 nC enables fast switching.
- Maximum power dissipation of 156 watts to handle demanding power conditions.
- Operating temperature range from -55°C to 150°C ensuring reliability.
- Low maximum drain-source resistance of 450 milliohms reduces conduction losses.
- Typical forward voltage of 1.2 volts enhancing efficiency.
Product Description
Infineon SPP11N80C3XKSA1 is a CoolMOS C3 series N-Channel MOSFET designed for high efficiency power switching applications. Featuring an 11 ampere maximum continuous drain current and an 800 volt maximum drain-source voltage, it provides robust performance in demanding industrial, automotive, and power electronics environments.
This device comes in a 3-pin TO-220 through-hole package, facilitating straightforward mounting and screw fixing in assemblies. Its low typical gate charge of 64 nC enables rapid switching speeds, contributing to lower switching losses and improved power density in circuits.
The MOSFET supports an enhancement channel mode with a maximum drain-source resistance (Rds(on)) of 450 milliohms, balancing conduction efficiency and thermal management. Its maximum power dissipation is rated at 156 watts, allowing it to handle considerable power loads reliably with appropriate cooling.
Designed to operate within a temperature range of -55°C to 150°C, this component assures long-term reliability in harsh operating conditions. The maximum gate-source voltage is ±20 volts, enabling stable gate control. Typical forward voltage of 1.2 volts also supports efficient conduction during operation.
While this MOSFET does not have automotive standard certification, its design aligns with high-quality manufacturing processes and semiconductor industry standards, making it suitable for a variety of industrial and power management applications including power supplies, motor controls, and energy-efficient converter circuits.
Maximum continuous drain current of 11 amperes. Maximum drain-source voltage of 800 volts. 3-pin TO-220 through-hole package type. Typical gate charge of 64 nC at Vgs. Maximum power dissipation of 156 watts. Operating temperature from -55°C to 150°C.
Low Rds(on) resistance of 450 milliohms. Maximum gate-source voltage ±20 volts. Forward voltage of 1.2 volts.
This product is categorized under Power MOSFET components in the Electronics and Electricals semiconductor segment. It is ideal for industrial, laboratory, power electronics, HVAC, manufacturing, and automotive development applications requiring high voltage and high current switching devices.
Explore more from Infineon's advanced semiconductor MOSFET portfolios at EnvMart to meet your power efficiency and performance needs.
Looking to purchase in bulk?
- Purchase item in bulk quantity
- Get best price for your business
Frequently Asked Questions
The maximum continuous drain current of this model is 11 amperes.
It has a maximum drain-source voltage of 800 volts, making it suitable for high voltage applications.
This unit comes in a 3-pin TO-220 package, which allows for through-hole mounting.
The typical gate charge is 64 nC, which enables fast switching speeds.
The maximum power dissipation for this MOSFET is rated at 156 watts, allowing it to handle considerable power loads.
It operates within a temperature range of -55°C to 150°C, ensuring reliability in various conditions.
The maximum gate-source voltage is ±20 volts, which allows for stable gate control.
The maximum drain-source resistance (Rds(on)) is 450 milliohms, which helps reduce conduction losses.
The dimensions of this model are 10.36mm in length, 4.57mm in width, and 9.45mm in height.
This MOSFET is suitable for industrial, automotive, and power electronics applications, including power supplies and motor controls.
The typical forward voltage is 1.2 volts, which enhances conduction efficiency during operation.
This model uses an N-channel type, designed for enhancement mode operation.
Related Products
$0.19
$0.19
-3%
New
Other Products from this brand
Recently Viewed Products
$2.75
$2.67
Save 3%
Tax included
Quantity
Global Payments 140+ Countries
Global Shipping Fedex/UPS/DHL/Aramex/
BlueDart/Delhivery/DP World
24/7 Customer Support Email/Chat/Telephonic Support
Comments (0)
Your review appreciation cannot be sent
Report comment
Report sent
Your report cannot be sent