DiodesZetex Isolated 2 Type P, Type N-Channel Power MOSFET 8.5A 30V 8-Pin SOIC DMC3021LSD-13

DiodesZetex DMC3021LSD-13 is an advanced isolated dual power MOSFET device featuring both Type P and Type N channel transistors in a compact 8-pin SOIC surface-mount package. Designed for industrial and automotive semiconductor applications, this device offers efficient power switching with a continuous drain current capacity of 8.5 A and a maximum drain-source voltage rating of 30 V.

This enhancement mode MOSFET features a low Rds(on) of 53 milliohms, ensuring minimal conduction losses and enhanced system efficiency. The device is designed to operate reliably across a wide temperature range from -55°C up to +150°C, supporting applications in demanding environmental conditions.

The transistor configuration is isolated with dual elements per chip, suitable for integrated power management circuits. Its typical gate charge of 7.8 nC contributes to efficient gate switching characteristics. The 8-pin SOIC package offers compact footprint advantages, facilitating PCB space optimization in various electronic designs.

Compliance with key automotive and industrial standards such as AEC-Q101, MIL-STD-202, and RoHS demonstrates the device's robustness and regulatory conformity. Its standardized certifications include J-STD-020 and UL 94V-0, suitable for reliable operation and safety in electrical applications.

The device's physical dimensions are 4.95 mm in length, 3.95 mm in width, and 1.5 mm in height, allowing integration into compact assemblies. This MOSFET finds utility in power control circuits, motor drivers, automotive systems, and industrial electronics requiring isolated dual-channel switching.

Provides a maximum continuous drain current of 8.5 amperes. Features an 8-pin SOIC surface-mount package suitable for compact PCB designs. Maximum drain-source voltage rating of 30 volts with low drain-source resistance of 53 milliohms.

Supports enhancement mode channel operation for efficient switching. Maximum power dissipation of 2.5 watts for thermal reliability. Operates within a temperature range of -55°C to +150°C. Typical gate charge of 7.8 nanocoulombs at specified gate voltage.

Isolated transistor configuration with dual N/P-channel elements per chip. Compliant with industry standards including AEC-Q101, RoHS, MIL-STD-202, and UL 94V-0. Compact dimensions of 4.95 mm length, 3.95 mm width, and 1.5 mm height.

Explore the range of DiodesZetex semiconductor components at EnvMart for reliable Power MOSFET solutions suitable for your industrial and automotive designs.