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DiodesZetex Isolated Dual Type P and Type N-Channel MOSFET 20 V, 540 mA, 6-Pin SC-88 DMC2004DWK-7
Specifications
| Country of Origin | China |
|---|---|
| Brand | DiodesZetex |
| Height | 1mm |
| Length | 2.2mm |
| Model | DMC2004DWK-7 |
| Width | 1.35mm |
| Mount Type | Surface |
| Maximum Operating Temperature | +150°C |
| Package Type | SC-88 |
| Minimum Operating Temperature | -65°C |
| Standards/Approvals | AEC-Q101, MIL-STD-202, RoHS, J-STD-020, UL 94V-0 |
| Pin Count | 6 |
| Number of Elements per Chip | 2 |
| Automotive Standard | AEC-Q200, AEC-Q100, AEC-Q101 |
| Channel Type | Type P, Type N |
| Maximum Continuous Drain Current Id | 540mA |
| Maximum Drain Source Voltage Vds | 20V |
| Maximum Drain Source Resistance Rds | 900mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 250mW |
| Maximum Gate Source Voltage Vgs | 8, -8V |
| Forward Voltage Vf | 1.2V |
| Transistor Configuration | Isolated |
Key Features
- Supports a maximum continuous drain current of 540 mA.
- Maximum drain-source voltage is rated at 20 V for efficient operation.
- Features a compact 6-pin SC-88 package suitable for surface mounting.
- Channel mode is enhancement type ensuring effective switching control.
- Maximum power dissipation is 250 mW, optimized for low power losses.
- Operates within a temperature range from -65°C to +150°C for wide industrial conditions.
- Maximum gate-source voltage tolerance of ±8 V enhances input flexibility.
- Low forward voltage of 1.2 V for enhanced efficiency.
Product Description
DiodesZetex DMC2004DWK-7 is an isolated dual type P and type N-channel MOSFET designed for advanced semiconductor applications in industrial and automotive electronics. Packaged in a compact 6-pin SC-88 surface-mount configuration, it supports a continuous drain current of 540 mA and handles a maximum drain-source voltage of 20 V. This device operates in enhancement channel mode and is suited for efficient switching and signal amplification in compact electronic circuits.
The MOSFET transistors exhibit a maximum power dissipation of 250 mW, allowing for reliable performance while maintaining low heat generation. With a broad operational temperature range from -65°C to +150°C, the DMC2004DWK-7 ensures stable functionality in harsh environments and automotive systems adhering to rigorous industry standards like AEC-Q100, AEC-Q200, and AEC-Q101.
The device features a maximum gate-source voltage of ±8 V and a forward voltage drop of 1.2 V, enabling excellent control and minimal power loss during switching. The physical dimensions of this MOSFET are 2.2 mm in length, 1.35 mm in width, and 1 mm in height, making it highly suitable for compact assembly designs.
Designed with isolated transistor configurations and dual elements per chip, this component is ideal for semiconductor discrete applications, power switching, and electronic component manufacturing for automotive and other industrial sectors.
Supports maximum continuous drain current of 540 mA. Maximum drain-source voltage of 20 V. Compact 6-pin SC-88 surface-mount package. Enhancement channel mode for efficient switching. Operational temperature range from -65°C to +150°C.
Maximum power dissipation of 250 mW. Complies with automotive and military industrial standards. Dual N/P-channel MOSFET elements per chip. Low forward voltage of 1.2 V for improved efficiency. Dimensions: 2.2 mm length, 1.35 mm width, 1 mm height.
This MOSFET is ideally suited for use in semiconductor discrete devices, automotive electronics, and industrial power management circuits where reliable, efficient transistor switching is critical. Its compliance with stringent industrial standards assures high-quality performance for commercial and manufacturing use cases.
Explore more semiconductor products in the MOSFET category on EnvMart for professional electronics design and manufacturing solutions.
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Frequently Asked Questions
The maximum continuous drain current for this model is 540 mA.
It has a maximum drain-source voltage rating of 20 V.
This MOSFET is packaged in a compact 6-pin SC-88 surface-mount configuration.
It operates within a temperature range from -65°C to +150°C.
The maximum power dissipation is rated at 250 mW.
The dimensions are 2.2 mm in length, 1.35 mm in width, and 1 mm in height.
It supports both Type P and Type N-channel configurations.
The maximum gate-source voltage tolerance is ±8 V.
The forward voltage drop is 1.2 V.
It complies with automotive standards AEC-Q100, AEC-Q200, and AEC-Q101.
This model features two elements per chip.
The channel mode is enhancement type, which is designed for efficient switching.
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