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| Country of Origin | China |
|---|---|
| Brand | DiodesZetex |
| Height | 800μm |
| Length | 1.7mm |
| Model | DMG1013T-7 |
| Width | 850μm |
| Mount Type | Surface |
| Series | DMG1013T |
| Maximum Operating Temperature | 150°C |
| Package Type | SC-89 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Automotive Standard | AEC-Q101 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 460mA |
| Maximum Drain Source Voltage Vds | 20V |
| Maximum Drain Source Resistance Rds | 1.3Ω |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 270mW |
| Typical Gate Charge Qg @ Vgs | 0.58nC |
| Maximum Gate Source Voltage Vgs | -6, +6V |
| Forward Voltage Vf | -1.2V |
DiodesZetex DMG1013T-7 is a high-performance P-Channel MOSFET designed for efficient switching and amplification applications within semiconductor and electronics domains. It features a maximum continuous drain current of 460 mA and supports a maximum drain-source voltage of 20 V, making it suitable for low power electronics, signal processing, and control circuits.
Encapsulated in a 3-pin SC-89 surface mount package, this MOSFET ensures compactness and easy integration into printed circuit boards (PCBs). Its enhancement mode channel provides reliable switching characteristics, optimized to deliver low resistance and efficient gate control.
The device complies with the automotive standard AEC-Q101, underscoring its robustness and reliability in automotive and industrial electronic systems. It maintains stable operation across a wide temperature range, from -55°C to 150°C, supporting harsh environmental conditions.
Key electrical properties include a maximum power dissipation of 270 mW and typical gate charge of 0.58 nC, ensuring efficient power management especially in circuits requiring fast switching. Its forward voltage of -1.2 V and maximum gate-source voltage rating of -6 to +6 V provide safe operation within specified voltages.
The MOSFET’s dimension specifics - length 1.7 mm, width 850 μm, and height 800 μm - highlight its compact form factor. Originating from China, this semiconductor component is an ideal choice for industrial electronics, automotive electronics, consumer electronic devices, and prototyping projects.
Type P channel designed for enhancement mode operation. Maximum continuous drain current rated at 460 mA. Low maximum drain-source resistance of 1.3 Ω. Compact 3-pin SC-89 surface mount package for easy PCB integration. High maximum operating temperature up to 150°C.
Typical gate charge is 0.58 nC ensuring efficient switching. Conforms to automotive standard AEC-Q101. Operating temperature range from -55°C to 150°C. Maximum power dissipation of 270 mW for reliable performance. Originates from China, ensuring quality manufacturing standards.
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