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| Country of Origin | China |
|---|---|
| Brand | DiodesZetex |
| Height | 1mm |
| Length | 2.2mm |
| Model | BSS123W-7-F |
| Width | 1.35mm |
| Mount Type | Surface |
| Series | BSS123W |
| Maximum Operating Temperature | 150°C |
| Package Type | SC-70 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 170mA |
| Maximum Drain Source Voltage Vds | 100V |
| Maximum Drain Source Resistance Rds | 10Ω |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 200mW |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.2V |
DiodesZetex BSS123W-7-F is a high-quality N-Channel MOSFET transistor designed for efficient surface mount electronic applications. Featuring a robust maximum continuous drain current of 170 mA and a maximum drain source voltage of 100 V, this MOSFET ensures reliable switching performance in diverse industrial and commercial electronics.
The device is housed in a compact 3-pin SC-70 package that is ideal for space-constrained PCB layouts. Its enhancement mode channel operation provides controlled conductivity and switching speed while maintaining low on-resistance with a maximum Rds of 10 Ω, enhancing circuit efficiency.
Engineered to withstand harsh environments, the BSS123W-7-F operates over a temperature range from -55°C to 150°C, suitable for automotive and industrial use. It meets the automotive AEC-Q101 standard, endorsing its capability for automotive electronics applications.
The maximum power dissipation rating is 200 mW, balancing performance and durability in continuous usage. The gate source voltage range of -20 V to +20 V enables flexible circuit design and robust gate control. Additionally, a forward voltage of 1.2 V supports smooth conduction characteristics.
Its compact size, with dimensions measuring 2.2 mm in length, 1.35 mm in width, and 1 mm in height, allows for integration into tightly packed circuits without sacrificing thermal or electrical performance.
Designed for surface mount applications with a compact SC-70 package. Operates in enhancement mode with maximum power dissipation of 200 mW. Wide operating temperature range from -55°C to 150°C ensures durability. Maximum gate source voltage of ±20 V supports robust switching.
Low maximum drain source resistance of 10 Ω offers efficiency in switching circuits. Forward voltage rating of 1.2 V for optimal conduction. Compliant with automotive standard AEC-Q101 for reliability. Compact package with dimensions 2.2 mm x 1.35 mm x 1 mm.
Applications include automotive electronics, industrial controls, power management, and general-purpose low power switching circuits. This MOSFET is fit for use in electronics manufacturing, repair, and R&D laboratories requiring durable, reliable semiconductor components.
Explore our extensive range of semiconductor components and MOSFET solutions at EnvMart for quality assurance and prompt delivery.
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