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Infineon HEXFET N-Channel MOSFET 2.7A 30V Enhancement Mode 3-Pin SOT-23 IRLML2030TRPBF
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 1.02mm |
| Length | 3.04mm |
| Model | IRLML2030TRPBF |
| Width | 1.4mm |
| Mount Type | Surface |
| Series | HEXFET |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-23 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 2.7A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 100mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 1.3W |
| Typical Gate Charge Qg @ Vgs | 1nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1V |
Key Features
- Compact 3-pin SOT-23 surface-mount package for space-saving PCB designs.
- Low on-resistance of 100mΩ to minimize conduction losses and heat generation.
- Supports continuous drain current of 2.7A for reliable load handling.
- Wide operating temperature range from -55°C to 150°C for extreme ambient conditions.
- Low gate charge of 1nC enabling fast switching performance.
- Maximum power dissipation of 1.3W for steady thermal management.
- Enhancement mode N-channel channel type for efficient enhancement switching.
- Gate-source voltage withstand up to ±20V for driver margin protection.
Product Description
Infineon IRLML2030TRPBF is an N-Channel HEXFET MOSFET optimized for low-power switching applications in electronic circuits. Rated for a continuous drain current of 2.7 amps and a maximum drain-source voltage of 30 volts, this enhancement mode device offers efficient switching with minimal conduction losses thanks to its low 100mΩ on-resistance. Its small 3-pin SOT-23 surface-mount package enables space-saving PCB layouts suitable for compact device designs.
The MOSFET operates reliably over a wide temperature range from -55°C to 150°C, making it suitable for demanding industrial, automotive, and consumer electronics environments. The device's low gate charge of 1nC allows for fast switching frequency capability while adhering to strict thermal budgets due to its maximum power dissipation rating of 1.3 watts.
Applications include battery protection circuits, load switching, DC-DC converters, LED drivers, and small motor control among others. The gate-source voltage rating of ±20 volts provides robust protection margin for driving circuits. The compact dimensions of 3.04 mm length, 1.4 mm width, and 1.02 mm height facilitate dense component packing on surface-mount technology boards.
Compact SOT-23 surface-mount package supports modern miniaturized electronic device designs. Low drain-source on-resistance reduces power losses and thermal stress in switching applications. Wide operating temperature range enables use in harsh environmental conditions.
Suitable for battery management and portable device power stages. Supports LED driver circuits and low-voltage motor control. Ideal for general signal level switching in consumer and industrial electronics.
This Infineon HEXFET N-Channel MOSFET IRLML2030TRPBF is part of the HEXFET series known for robust performance and efficient switching, ideal for industrial, laboratory, automotive, and commercial electronics applications. Explore related MOSFET components and Infineon products for your electronic design and manufacturing needs on EnvMart.
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Frequently Asked Questions
The maximum continuous drain current for this model is 2.7A.
This MOSFET has a maximum drain-source voltage rating of 30V.
The on-resistance is 100mΩ, which helps minimize conduction losses and heat generation.
It operates reliably over a wide temperature range from -55°C to 150°C.
The typical gate charge is 1nC, allowing for fast switching performance.
The dimensions are 3.04 mm in length, 1.4 mm in width, and 1.02 mm in height.
The maximum power dissipation is rated at 1.3W.
This model supports surface mounting, suitable for compact PCB designs.
It features an N-channel type, optimized for enhancement mode switching.
It is suitable for applications such as battery protection circuits, load switching, DC-DC converters, and LED drivers.
The maximum gate-source voltage rating is ±20V, providing a robust protection margin.
This model belongs to the HEXFET series, known for efficient switching performance.
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