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Infineon OptiMOS 3 N-Channel Power Transistor, 50 A, 30 V Enhancement Mode, 3-Pin TO-220 IPP055N03LGXKSA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 15.95mm |
| Length | 10.36mm |
| Model | IPP055N03LGXKSA1 |
| Width | 4.57mm |
| Mount Type | Surface, Through Hole |
| Series | OptiMOS 3 |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | IEC61249-2-21, JEDEC (J-STD20,JESD22), RoHS |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 50A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 5.5mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 68W |
| Typical Gate Charge Qg @ Vgs | 31nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.1V |
Key Features
- Features fast switching capability for enhanced efficiency in power applications.
- Has a low drain-source on-resistance of 5.5 mΩ to minimize power loss.
- Avalanche rated for durability under electrical stress.
- Logic-level N-channel design suitable for low-voltage drive compatibility.
- Maximum power dissipation of 68 W supports high power tasks.
- Operates reliably in temperatures ranging from -55°C to +175°C.
- Ideal for DC/DC power supply conversion and synchronous rectification.
- Applications include motor control in industrial automation and battery management for electric vehicles.
Product Description
Infineon IPP055N03LGXKSA1 OptiMOS 3 N-Channel Power Transistor is a high-performance semiconductor device designed for efficient power management. Its 50 A maximum continuous drain current and 30 V drain-source voltage rating make it suitable for demanding industrial, electrical, and automation applications. The 3-pin TO-220 package supports both surface and through-hole mounting, providing versatile integration options.
With a low on-resistance of 5.5 milliohms, this transistor minimizes power loss and heat generation, significantly improving efficiency in switching applications. Its fast switching capability and avalanche robustness ensure reliable operation under stress conditions, enhancing durability and system stability.
The transistor's logic-level enhancement mode design allows it to operate effectively with low-voltage control signals, making it compatible with modern DC/DC converters and synchronous rectification circuits. It excels in motor control applications within industrial automation and plays a crucial role in battery management systems for electric vehicles and renewable energy devices.
This device is rated for operation in extreme temperatures from -55°C up to 175°C, ensuring dependable performance even in harsh industrial environments. Its compliance with IEC, JEDEC, and RoHS standards guarantees quality and environmental safety.
Fast switching capability enhances power application efficiency. Low on-resistance reduces power dissipation and heat. Avalanche rated for improved durability under electrical stress. Logic-level N-channel design supports low-voltage drive compatibility.
High maximum continuous drain current of 50 A. Compact TO-220 package with versatile mounting options. Wide operating temperature range from -55°C to 175°C. Compliant with industry standards IEC61249-2-21, JEDEC J-STD20, JESD22, and RoHS.
This transistor is ideal for use in industrial automation systems, power supplies, electronics manufacturing, automotive electric systems, and renewable energy technologies. It enables efficient power conversion and robust motor control, supporting advanced electronic designs and applications.
Explore more power semiconductor devices like MOSFETs and find solutions tailored to complex power management needs at EnvMart.
Explore more products in our Power Transistors category.
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Frequently Asked Questions
The maximum continuous drain current for this model is 50 A.
The maximum drain-source voltage rating is 30 V.
It has a low drain-source on-resistance of 5.5 mΩ, which helps minimize power loss.
This transistor operates reliably in temperatures ranging from -55°C to 175°C.
The transistor is housed in a TO-220 package, supporting both surface and through-hole mounting.
It complies with IEC61249-2-21, JEDEC (J-STD20, JESD22), and RoHS standards.
The maximum power dissipation is rated at 68 W.
The typical gate charge is 31 nC at Vgs.
This model features an N-channel design, suitable for low-voltage drive compatibility.
It is ideal for applications such as motor control in industrial automation and battery management for electric vehicles.
The maximum gate-source voltage is -20 V to +20 V.
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