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Vishay N-Channel MOSFET 1.15 A 100 V Enhancement 3-Pin SOT-23 SI2328DS-T1-E3
Specifications
| Country of Origin | China |
|---|---|
| Brand | Vishay |
| Height | 1.02mm |
| Length | 3.04mm |
| Model | SI2328DS-T1-E3 |
| Width | 1.4mm |
| Mount Type | Surface |
| Series | Si2328DS |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-23 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 1.15A |
| Maximum Drain Source Voltage Vds | 100V |
| Maximum Drain Source Resistance Rds | 250mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 730mW |
| Typical Gate Charge Qg @ Vgs | 3.3nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.2V |
Key Features
- Maximum continuous drain current of 1.15 A.
- Drain-source voltage rated at 100 V.
- Low drain-source resistance of 250 milliohms ensures efficient conduction.
- Enhancement mode channel type suitable for various electronics.
- Compact SOT-23 package ideal for surface mounting.
- Typical gate charge of 3.3 nC at 3.3 V gate-source voltage.
- Maximum gate-source voltage ranges from -20 V to +20 V.
- Power dissipation up to 730 mW supports moderate load conditions.
Product Description
Vishay SI2328DS-T1-E3 is a high-quality N-Channel MOSFET suitable for diverse industrial and electronic applications requiring reliable switching and amplification performance. This device comes in a compact 3-pin SOT-23 surface-mount package that supports integration into compact PCB designs.
The MOSFET features a maximum continuous drain current of 1.15 A and a drain-source voltage rating of 100 V, making it suitable for low to medium power switching tasks. Its low drain-source resistance of 250 milliohms minimizes power losses and improves energy efficiency in circuit applications.
Designed with an enhancement mode channel, the transistor ensures a normally-off state for safety and power conservation. The typical gate charge of 3.3 nC at 3.3 V gate voltage facilitates fast switching times, enhancing overall circuit responsiveness.
The device supports a wide gate-source voltage range from -20 V to +20 V, allowing flexible interfacing with control signals. Its maximum power dissipation of 730 mW enables it to handle moderate power loads in embedded and industrial electronics.
Operation over a broad temperature range from -55°C to 150°C ensures dependable functionality in demanding environmental conditions, suitable for industrial, automotive, and consumer electronics.
The physical dimensions measure 3.04 mm in length, 1.4 mm width, and 1.02 mm in height, optimized for SOT-23 footprint PCBs ensuring ease of assembly and reliability. Maximum continuous drain current of 1.15 A. Drain-source voltage rating of 100 V.
Low Rds (on) of 250 milliohms for efficient conduction. Compact 3-pin SOT-23 surface-mount package. Wide operating temperature from -55°C to 150°C. Enhancement mode N-Channel MOSFET technology. Maximum power dissipation of 730 mW.
Typical gate charge of 3.3 nC at 3.3 V gate-source voltage. Maximum gate-source voltage ±20 V. Suitable for industrial, automotive, and general electronic applications.
This Vishay N-Channel MOSFET SI2328DS-T1-E3 is ideal for use in switching regulators, power management systems, and motor control circuits in industrial and commercial electronics environments. EnvMart offers efficient sourcing options ensuring industrial-grade quality and reliability.
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Frequently Asked Questions
The maximum continuous drain current of this MOSFET is 1.15 A.
The drain-source voltage rating for this model is 100 V.
It features a low drain-source resistance of 250 milliohms.
The typical gate charge at a 3.3 V gate-source voltage is 3.3 nC.
The maximum power dissipation of this MOSFET is 730 mW.
This model operates over a broad temperature range from -55°C to 150°C.
The physical dimensions are 3.04 mm in length, 1.4 mm in width, and 1.02 mm in height.
It comes in a compact 3-pin SOT-23 surface-mount package.
The maximum gate-source voltage ranges from -20 V to +20 V.
This device uses an enhancement mode N-channel type.
It is suitable for industrial, automotive, and general electronic applications.
The forward voltage of this model is 1.2 V.
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