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Vishay 30 Degree Infrared Phototransistor, Through Hole 2-Pin 5 mm (T-1 3/4) Package BPV11F
Specifications
| Country of Origin | India |
|---|---|
| Diameter | 5mm |
| Brand | Vishay |
| Operating Temperature | -40 to +100 °C |
| Height | 8.6mm |
| Length | 5.75mm |
| Model | BPV11F |
| Packaging | Bulk |
| Width | 5.75mm |
| Mount Type | Through Hole |
| Series | BPV11 |
| Maximum Operating Temperature | 100°C |
| Package Type | 5 mm (T-1 3/4) |
| Minimum Operating Temperature | -40°C |
| Number Of Channels | 1 |
| Standards/Approvals | RoHS |
| Number of Pins | 2 |
| Typical Rise Time | 6μs |
| Typical Fall Time | 5μs |
| Peak Wavelength | 930nm |
| Spectrums Detected | Infrared |
| Angle of Half Sensitivity | 30 ° |
| Collector Current | 50mA |
| Maximum Light Current | 9000μA |
| Maximum Dark Current | 50nA |
| Collector Emitter Voltage | 70V |
Key Features
- Features a highly sensitive silicon NPN phototransistor construction.
- Operates effectively at peak wavelength of 930nm in the infrared spectrum.
- Provides fast response times with typical rise time of 6μs and fall time of 5μs.
- Supports a maximum collector current of 50mA and collector emitter voltage up to 70V.
- Designed for through-hole mounting with 2 pins in a standard 5 mm (T-1 3/4) package.
- Can operate in temperatures ranging from -40°C up to 100°C for robust industrial use.
- Incorporates a 30° angle of half sensitivity optimized for precise light detection.
- RoHS compliant and bulk packaged for ease of integration.
Product Description
Vishay BPV11F is an infrared phototransistor designed for high performance in industrial electronic applications and measurement systems. The device is housed in a standard 5 mm (T-1 3/4) through-hole 2-pin package, making it straightforward to mount on printed circuit boards.
This phototransistor is built on silicon NPN technology, optimized for infrared detection at a peak wavelength of 930nm, making it suitable for detection and control systems requiring sensitive and reliable light sensing.
The BPV11F exhibits fast switching behavior with a typical rise time of 6 microseconds and fall time of 5 microseconds, enabling rapid response to changing light conditions. It supports a maximum collector current of 50mA and a collector emitter voltage rating of 70V, ensuring robust operation in varied electrical environments.
The operating temperature range from -40°C to +100°C ensures suitability in demanding industrial settings where temperature fluctuations are common. Its 30° angle of half sensitivity improves accuracy in detecting target infrared light sources while minimizing interference.
Highly sensitive silicon NPN phototransistor construction. Peak wavelength detection at 930nm in the infrared spectrum. Fast typical rise and fall times (6μs / 5μs respectively). Maximum collector current of 50mA with 70V collector emitter voltage.
Through-hole mount type with 2-pin configuration in 5 mm (T-1 3/4) package. Wide operating temperature range of -40°C to +100°C. 30° angle of half sensitivity for precise detection. RoHS compliant for environmentally friendly manufacturing.
This phototransistor is ideally suited for industrial electronic, measurement, and control applications, where accurate infrared light detection is critical. It is often used in automation systems, safety sensors, and other optoelectronic devices.
Explore other high-quality Vishay Phototransistors and optoelectronic components at EnvMart for enhanced electronic design and manufacturing solutions.
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Frequently Asked Questions
The BPV11F operates effectively at a peak wavelength of 930nm in the infrared spectrum.
It has a typical rise time of 6 microseconds and a fall time of 5 microseconds, allowing for fast response to light changes.
This phototransistor supports a maximum collector current of 50mA and a collector emitter voltage of up to 70V.
The operating temperature range is from -40°C to +100°C, making it suitable for various industrial applications.
It is designed for through-hole mounting with a 2-pin configuration in a standard 5 mm (T-1 3/4) package.
The angle of half sensitivity is 30°, which optimizes it for precise light detection.
The BPV11F has a diameter of 5mm, a height of 8.6mm, and a length and width of 5.75mm.
Yes, the BPV11F is RoHS compliant, ensuring it meets environmental standards for manufacturing.
It is ideally suited for industrial electronic applications, measurement systems, and control systems requiring accurate infrared light detection.
The maximum light current is 9000μA, while the maximum dark current is 50nA.
This model is part of the BPV11 series of phototransistors.
It is bulk packaged for ease of integration into various electronic designs.
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