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DiodesZetex N-Channel MOSFET 4 A, 100 V, Enhancement Mode, 4-Pin SOT-223 ZXMN10A25GTA

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DiodesZetex N-Channel MOSFET 4 A, 100 V, Enhancement Mode, 4-Pin SOT-223 ZXMN10A25GTA

Name: DiodesZetex N-Channel MOSFET 4 A, 100 V, Enhancement Mode, 4-Pin SOT-223 ZXMN10A25GTA
Brand: DiodesZetex
SKU: 127659
Price: 1.28 USD
Availability: InStock

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Category MOSFETs Brand DiodesZetex Condition New

Specifications

Country of Origin	India
Brand	DiodesZetex
Height	1.8mm
Length	6.7mm
Model	ZXMN10A25GTA
Width	3.7mm
Mount Type	Surface
Series	ZXMN10A25G
Maximum Operating Temperature	150°C
Package Type	SOT-223
Minimum Operating Temperature	-55°C
Pin Count	4
Channel Type	N
Maximum Continuous Drain Current Id	4A
Maximum Drain Source Voltage Vds	100V
Maximum Drain Source Resistance Rds	125mΩ
Channel Mode	Enhancement
Maximum Power Dissipation Pd	3.9W
Typical Gate Charge Qg @ Vgs	17nC
Maximum Gate Source Voltage Vgs	-20, +20V
Forward Voltage Vf	850mV

Key Features

Maximum continuous drain current of 4 amperes.
Maximum drain-source voltage rated at 100 volts.
Low drain-source resistance of 125 milliohms for efficient switching.
Typical gate charge of 17 nanocoulombs at specified gate-source voltage.
Maximum power dissipation capacity of 3.9 watts.
Operating temperature range from -55°C to 150°C.
Compact SOT-223 surface-mount package with 4 pins.
Forward voltage of 850 millivolts ensuring low conduction losses.

Product Description

DiodesZetex ZXMN10A25GTA is an N-Channel enhancement mode MOSFET designed for power switching and amplification applications at voltages up to 100 V and continuous current of 4 A. Packaged in a compact 4-pin SOT-223 surface-mount device, it offers efficient switching with a low on-resistance of 125 mΩ and a typical gate charge of 17 nC, facilitating fast switching speeds and reduced power dissipation up to 3.9 W.

This transistor operates reliably across a wide temperature range from -55°C to 150°C, making it suitable for demanding industrial and electronic equipment environments. The device also features a forward voltage of 850 mV which ensures energy-efficient operation in power circuits. Its surface-mount package with dimensions of 6.7 mm length, 3.7 mm width, and 1.8 mm height allows for high-density PCB layouts in compact electronic assemblies.

The ZXMN10A25GTA MOSFET is used extensively in power management, signal switching, and amplification systems within electronic components, power supplies, telecommunications infrastructure, and automotive electronics where reliable discrete semiconductor devices are critical.

Maximum continuous drain current of 4 amperes. Maximum drain-source voltage of 100 volts suitable for power applications. SOT-223 surface mount package ensures easy integration and compact design. Low on-resistance for efficient energy use and minimal heat generation.

Wide operating temperature range from -55°C to 150°C for durability. Typical gate charge of 17 nanocoulombs allows fast switching speeds. Maximum power dissipation of 3.9 watts to handle moderate power loads. Forward voltage of 850 millivolts ensures low conduction losses.

Package size aids in space-saving PCB layouts in industrial electronics. Ideal for industrial, telecommunications, automotive, and power electronics applications. Explore additional DiodesZetex MOSFET products and related semiconductor devices on EnvMart to support your design and manufacturing requirements.

Explore more products in our MOSFETs category.