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DiodesZetex N-Channel MOSFET 7 A 40 V Enhancement Mode Surface Mount 4-Pin SOT-223 ZXMN4A06GTA
Specifications
| Country of Origin | India |
|---|---|
| Brand | DiodesZetex |
| Height | 1.8mm |
| Length | 6.7mm |
| Model | ZXMN4A06GTA |
| Width | 3.7mm |
| Mount Type | Surface |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-223 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 4 |
| Automotive Standard | AEC-Q100 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 7A |
| Maximum Drain Source Voltage Vds | 40V |
| Maximum Drain Source Resistance Rds | 75mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 3.9W |
| Typical Gate Charge Qg @ Vgs | 18.2nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 950mV |
Key Features
- The MOSFET supports a maximum continuous drain current of 7 A.
- Maximum drain-source voltage is rated at 40 V for robust operation.
- Low on resistance with maximum Rds of 75 milliohms enhances efficiency.
- Maximum power dissipation is 3.9 W for thermal management.
- Operating temperature range from -55°C to 150°C ensures reliability in harsh environments.
- Typical gate charge of 18.2 nC enables fast switching performance.
- Package designed as SOT-223 with 4 pins supports surface mounting.
- Complies with Automotive Standard AEC-Q100 for automotive applications.
Product Description
DiodesZetex ZXMN4A06GTA is an N-Channel enhancement mode MOSFET designed for power switching applications. It supports a maximum continuous drain current of 7 A and a maximum drain-source voltage of 40 V, making it suitable for low- to medium-power electronic circuits.
This device is packaged in a compact 4-pin SOT-223 surface mount package, facilitating PCB space optimization and effective heat dissipation. The MOSFET features a low drain-source resistance (Rds) of 75 milliohms, which reduces conduction losses and increases overall circuit efficiency.
The MOSFET's maximum power dissipation rating is 3.9 W, and it operates reliably over a wide temperature range from -55°C up to 150°C, offering robustness in industrial and automotive environments. Its typical gate charge of 18.2 nC at a gate-source voltage enables rapid switching suitable for high-frequency applications.
The MOSFET supports a maximum continuous drain current of 7 A. Maximum drain-source voltage is rated at 40 V for robust operation. Low on resistance with maximum Rds of 75 milliohms enhances efficiency. Maximum power dissipation is 3.9 W for thermal management.
Operating temperature range from -55°C to 150°C ensures reliability in harsh environments. Typical gate charge of 18.2 nC enables fast switching performance. Package designed as SOT-223 with 4 pins supports surface mounting.
Meets Automotive Standard AEC-Q100 for quality assurance in automotive applications.
This MOSFET is widely employed in industrial electronics, automotive electronic systems, and power management circuits where efficient switching and thermal handling are critical. Its surface mount format allows integration into compact PCB designs in control units, power converters, and motor drives.
Choose the DiodesZetex ZXMN4A06GTA for reliable, high-performance N-Channel MOSFET applications requiring a balance of current capacity, voltage rating, and thermal endurance. Explore multiple products and related components in the Semiconductors and MOSFET categories at EnvMart.
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Frequently Asked Questions
The maximum continuous drain current for this model is 7 A.
This MOSFET has a maximum drain-source voltage rating of 40 V.
The maximum drain-source resistance (Rds) is 75 milliohms, which enhances efficiency.
The maximum power dissipation for this model is 3.9 W.
It operates over a temperature range from -55°C to 150°C.
The typical gate charge is 18.2 nC at a gate-source voltage.
This model is packaged in a 4-pin SOT-223 surface mount configuration.
It complies with Automotive Standard AEC-Q100, ensuring quality for automotive applications.
The dimensions are 6.7 mm in length, 3.7 mm in width, and 1.8 mm in height.
The maximum gate-source voltage is rated at -20 V to +20 V.
This MOSFET is widely used in industrial electronics, automotive electronic systems, and power management circuits.
The channel type of this model is N-Channel enhancement mode.
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