onsemi Type P-Channel MOSFET 1 A 20 V Enhancement Surface Mount 3-Pin SOT-23 NTR1P02T1G

The onsemi NTR1P02T1G is a highly efficient Type P-Channel MOSFET transistor designed for surface mount applications. It comes in a compact 3-pin SOT-23 package that is ideal for modern electronics requiring low-voltage switching components. With a continuous drain current capability of 1 ampere and a maximum drain-source voltage rating of 20 volts, this MOSFET is engineered for reliability and efficiency in power management circuits.

This device operates in enhancement mode, providing effective control over switching operations. It features a low drain-source resistance of 180 milliohms which helps minimize power losses and enhances overall circuit efficiency. The gate-source voltage range of -20 to +20 volts ensures flexibility in circuit designs requiring varied control voltages.

The typical gate charge of 2.5 nanocoulombs at rated voltage indicates rapid switching capability suited for high-frequency applications. Its maximum power dissipation rating of 400 milliwatts supports operation in thermally demanding environments. The transistor retains functionality over a broad temperature range from -55°C to 150°C, allowing use in various industrial, automotive (non-automotive rated), and electronic applications.

The small footprint with dimensions 2.9 mm (length), 1.3 mm (width), and 940 μm (height) makes it suitable for space-constrained PCB designs in consumer electronics, communication devices, and power supply modules. The surface mount design helps improve assembly throughput and reduces manufacturing costs.

This MOSFET is commonly used in switching regulators, load switching, DC-DC converters, and general purpose low voltage power switching applications in commercial electronics manufacturing and industrial automation. Compatible with modern SMT assembly lines, the onsemi NTR1P02T1G supports enhanced production efficiency.

Features a 3-pin SOT-23 surface mount package for compactness. Maximum continuous drain current of 1 A for steady state operation. Maximum drain-source voltage rating of 20 V for low voltage power circuits. Low Rds(on) of 180 mΩ reduces conduction losses.

Enhancement mode channel for reliable switching control. Wide gate voltage range (-20 V to +20 V) for robustness. Typical gate charge of 2.5 nC enabling high-speed switching. Maximum power dissipation of 400 mW to support demanding applications.

Operating temperature range from -55°C to 150°C ensures durability. Compact size supports high density PCB layouts. Explore the Semiconductor category on EnvMart for similar MOSFETs and discrete transistor devices from leading brands including onsemi.