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onsemi P-Channel Enhancement Mode MOSFET 180 mA 60 V 3-Pin SOT-23 NDS0605

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onsemi P-Channel Enhancement Mode MOSFET 180 mA 60 V 3-Pin SOT-23 NDS0605

Name: onsemi P-Channel Enhancement Mode MOSFET 180 mA 60 V 3-Pin SOT-23 NDS0605
Brand: onsemi
SKU: 125869
Price: 0.11 USD
Availability: InStock

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Category MOSFET Brand onsemi Condition New

Specifications

Country of Origin	India
Brand	onsemi
Height	930μm
Length	2.92mm
Model	NDS0605
Width	1.3mm
Mount Type	Surface
Series	NDS0605
Maximum Operating Temperature	150°C
Package Type	SOT-23
Minimum Operating Temperature	-55°C
Pin Count	3
Channel Type	Type P
Maximum Continuous Drain Current Id	180mA
Maximum Drain Source Voltage Vds	60V
Maximum Drain Source Resistance Rds	5Ω
Channel Mode	Enhancement
Maximum Power Dissipation Pd	360mW
Typical Gate Charge Qg @ Vgs	1.8nC
Maximum Gate Source Voltage Vgs	-20, +20V
Forward Voltage Vf	-1.5V

Key Features

Utilizes DMOS technology for rugged and reliable performance.
High-density cell design minimizes on-state resistance.
Surface mount package type ideal for automated assembly.
Maximum continuous drain current of 180 mA ensures efficient load switching.
Maximum drain-source voltage of 60 V supports moderate voltage applications.
Low forward voltage drop enhances power efficiency.
Wide operating temperature range from -55°C to 150°C for industrial applications.
Typical gate charge of 1.8 nC allows rapid switching cycles.

Product Description

onsemi NDS0605 is a P-Channel Enhancement Mode MOSFET designed using ON Semiconductor's proprietary high cell density DMOS technology. This design targets minimized on-state resistance to provide rugged and reliable performance optimized for high-speed switching applications in electronics and power management.

The NDS0605 MOSFET is housed in a compact SOT-23 3-pin surface mount package with dimensions approximately 2.92 mm in length, 1.3 mm in width, and 930 μm in height, facilitating easy integration into miniature circuit boards.

It features a maximum continuous drain current of 180 mA and supports a maximum drain-source voltage of 60 V, making it suitable for load switching, DC/DC converters, battery protection, power management control, and DC motor control applications. The device's enhanced switching characteristics enable efficient control in protective and power regulation circuits.

The component operates efficiently over a wide temperature range from -55°C to 150°C and has a maximum power dissipation of 360 mW. Its maximum drain-source resistance is 5 Ω and typical gate charge at Vgs is 1.8 nC, supporting fast gate response times.

Additional features include voltage-controlled operation, a forward voltage of -1.5 V, and maximum gate-source voltage tolerance of -20 V to +20 V. This MOSFET is not automotive rated and comes without any special standards or approvals.

Applications include: load switching circuits, DC/DC converters, battery protection modules, power management control circuits, and DC motor drives in industrial, electronics, and commercial environments.

Utilizes DMOS technology for superior switching performance and durability. Compact surface mount design in SOT-23 package supports automated PCB assembly. Rated for continuous drain current of 180 mA and voltage up to 60 V.

Wide operating temperature range enhances industrial suitability. Typical gate charge of 1.8 nC supports rapid switching requirements. Explore more semiconductor products and MOSFET transistors at EnvMart for your electronic component needs.