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onsemi P-Channel Enhancement Mode MOSFET 2.5 A 60 V Surface Mount SOT-223 Package NDT2955

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onsemi P-Channel Enhancement Mode MOSFET 2.5 A 60 V Surface Mount SOT-223 Package NDT2955

Name: onsemi P-Channel Enhancement Mode MOSFET 2.5 A 60 V Surface Mount SOT-223 Package NDT2955
Brand: onsemi
SKU: 125867
Price: 0.45 USD
Availability: InStock

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Category MOSFET Brand onsemi Condition New

Specifications

Country of Origin	India
Brand	onsemi
Height	1.6mm
Length	6.5mm
Model	NDT2955
Width	3.56mm
Mount Type	Surface
Series	NDT
Maximum Operating Temperature	150°C
Package Type	SOT-223
Minimum Operating Temperature	-55°C
Pin Count	4
Channel Type	Type P
Maximum Continuous Drain Current Id	2.5A
Maximum Drain Source Voltage Vds	60V
Maximum Drain Source Resistance Rds	300mΩ
Channel Mode	Enhancement
Maximum Power Dissipation Pd	3W
Typical Gate Charge Qg @ Vgs	11nC
Maximum Gate Source Voltage Vgs	-20, +20V
Forward Voltage Vf	-1.2V

Key Features

Designed using high cell density DMOS technology for minimal on-state resistance.
Maximum continuous drain current of 2.5 A with a drain-source voltage of 60 V.
Robust and reliable performance with high saturation current and low forward voltage drop.
Surface mount package type SOT-223 with 4 pins enabling compact PCB design.
Operates within temperature range of -55°C to 150°C for versatile environmental applications.
Typical gate charge of 11 nC ensures efficient switching performance.
Maximum power dissipation of 3 W supports moderate power applications.
Commonly used for load switching, DC/DC converters, battery protection, and DC motor control.

Product Description

onsemi NDT2955 is a P-Channel Enhancement Mode MOSFET designed for efficient and reliable switching applications. This discrete semiconductor device features a maximum continuous drain current of 2.5 A and a maximum drain-source voltage of 60 V, packaged in a compact 4-pin SOT-223 surface mount body measuring 6.5 mm length, 3.56 mm width, and 1.6 mm height. Built with proprietary high cell density DMOS technology, it delivers minimal on-state resistance of 300 mΩ ensuring low conduction losses and superior saturation current capabilities.

The device operates over a wide temperature range extending from -55°C to 150°C, making it suitable for demanding industrial, automotive, and consumer electronics environments. Its typical gate charge of 11 nC at Vgs allows for fast switching speeds and efficient power management while the maximum gate-source voltage rating of ±20 V provides robust gate drive flexibility. The maximum power dissipation of 3 W suits it for moderate power applications where thermal management is crucial.

Applications include load switching, DC/DC conversion, battery protection circuits, and DC motor control applications within industrial automation, power management, and electronic instrumentation fields. The SOT-223 surface mount package contributes to efficient PCB utilization and heat dissipation.

High-density cell design minimizes on-state resistance. Voltage controlled P-Channel switch for precision electronic control. Compact 4-pin SOT-223 surface mount package. Wide operating temperature range from -55°C to 150°C.

Typical gate charge of 11 nC for fast switching. Robust performance with 2.5 A drain current and 60 V drain-source voltage ratings. Applications include power management, motor control, and battery protection. Proprietary DMOS technology enhances ruggedness and reliability.

Maximum power dissipation rated at 3 W for effective heat management.

This onsemi MOSFET is ideal for industrial, automotive, consumer electronics, HVAC, manufacturing, and power management systems requiring reliable and high-performance switching components. Explore advanced semiconductor components to enhance your designs and systems at EnvMart.