$0.51
$0.50
Tax included
Previous
Next
Share
Free Delivery in India | Lowest Global Shipping Charges
24/7 Customer Support
Shop with confidence knowing that our 24/7 Customer Support is always available to assist with any inquiries
Save up to 28% with GST Input
Avail maximum benefits from input tax mechanism on all your Business Invoices. Get GST Invoices on your business purchases. And 0% Taxes on all worldwide deliveries
# Lowest Price Challenge
If you find this product anywhere at lower cost than us. Call us and we will not only match the price but also give a complimentary coupon
100% Original Products
Shop with assurance, as each product we offer is 100% original, ensuring quality and authenticity with every purchase
onsemi QFET Type P-Channel MOSFET, 6.6 A, 100 V Enhancement, 3-Pin TO-252 FQD8P10TM
Specifications
| Country of Origin | Malaysia |
|---|---|
| Brand | onsemi |
| Height | 2.3mm |
| Length | 6.6mm |
| Model | FQD8P10TM |
| Width | 6.1mm |
| Mount Type | Surface |
| Series | QFET |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-252 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Automotive Standard | AEC-Q101 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 6.6A |
| Maximum Drain Source Voltage Vds | 100V |
| Maximum Drain Source Resistance Rds | 530mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 2.5W |
| Typical Gate Charge Qg @ Vgs | 12nC |
| Maximum Gate Source Voltage Vgs | -30, +30V |
| Forward Voltage Vf | -4V |
Key Features
- Enhancement mode channel operation ensures efficient switching performance.
- Maximum drain-source resistance of 530 milliohms promotes low conduction losses.
- Rated power dissipation of 2.5 W for reliable thermal handling.
- Operates across a wide temperature range from -55°C to 150°C maximum.
- Compliance with automotive standard AEC-Q101 suitable for automotive applications.
- Compact device dimensions with length 6.6 mm, width 6.1 mm, and height 2.3 mm.
- Capable of handling gate-source voltages up to ±30 V.
- Typical gate charge of 12 nC supports fast switching speeds.
Product Description
The onsemi FQD8P10TM is a high-quality QFET type P-Channel MOSFET designed for efficient power management in a compact 3-pin TO-252 surface mount package. It supports a maximum continuous drain current of 6.6 A and a maximum drain-source voltage of 100 V, making it ideal for medium-power applications.
This MOSFET operates in enhancement mode, which allows improved control and switching efficiency. With a maximum drain-source resistance of 530 milliohms, it minimizes conduction losses and improves overall system performance.
The device withstands a wide operating temperature range from -55°C to 150°C, supporting reliability even in harsh environments. Its compliance with the AEC-Q101 automotive standard ensures suitability for automotive and industrial applications requiring high quality and reliability.
Compact physical dimensions of 6.6 mm in length, 6.1 mm in width, and 2.3 mm in height allow integration into space-constrained circuit designs. The device supports a gate-source voltage tolerance up to ±30 V and has a typical gate charge of 12 nC, enabling fast switching for power electronics.
Additionally, the forward voltage drop of -4 V provides predictable conduction behavior critical for efficiency calculations. This MOSFET is well-suited for power management in automotive electronics, industrial equipment, and consumer electronics.
Enhancement mode P-channel MOSFET with efficient switching. Rated for 6.6 A continuous drain current and 100 V drain-source voltage. Compact TO-252 surface mount package with 3 pins. Automotive standard AEC-Q101 compliance ensures high reliability.
Wide operating temperature range from -55°C to 150°C. Low drain-source resistance of 530 milliohms for minimized losses. Supports gate-source voltages up to ±30 V for flexible control. Typical gate charge of 12 nC enables fast switching performance.
Forward voltage drop of -4 V for efficient conduction.
This onsemi MOSFET model FQD8P10TM is engineered for demanding industrial, automotive, and power electronics applications requiring reliable and efficient semiconductor switching components. It is especially suitable for use in automotive power circuits, industrial control systems, and general electronic power management where temperature tolerance and automotive standards are required.
Explore more semiconductor components within the Electronics & Electricals category on EnvMart for complementary products.
Looking to purchase in bulk?
- Purchase item in bulk quantity
- Get best price for your business
Frequently Asked Questions
The maximum continuous drain current for this model is 6.6 A.
It has a maximum drain-source voltage rating of 100 V.
This MOSFET has dimensions of 6.6 mm in length, 6.1 mm in width, and 2.3 mm in height.
The rated power dissipation for the FQD8P10TM is 2.5 W.
It operates within a temperature range of -55°C to 150°C.
The maximum gate-source voltage that this model can handle is ±30 V.
The typical gate charge for this model is 12 nC.
It has a maximum drain-source resistance of 530 milliohms.
This model complies with the AEC-Q101 automotive standard.
This MOSFET uses a P-channel type channel.
The forward voltage drop for the FQD8P10TM is -4 V.
This model uses a surface mount type for installation.
Related Products
$0.97
$0.94
-3%
New
Other Products from this brand
$6.86
$6.66
-3%
New
$0.97
$0.94
-3%
New
$0.06
$0.06
-3%
New
$0.51
$0.50
Save 3%
Tax included
Quantity
Global Payments 140+ Countries
Global Shipping Fedex/UPS/DHL/Aramex/
BlueDart/Delhivery/DP World
24/7 Customer Support Email/Chat/Telephonic Support
Comments (0)
Your review appreciation cannot be sent
Report comment
Report sent
Your report cannot be sent