onsemi Power MOSFET P-Channel Enhancement Mode 20 V, 13.5 A, 8-Pin SOIC Package FDS4465

onsemi FDS4465 is a Power MOSFET featuring a P-Channel with Enhancement Mode, optimized for applications requiring a maximum continuous drain current of 13.5 A and maximum drain-source voltage of 20 V. Packaged in an 8-pin SOIC surface mount format, it delivers reliable performance for power switching circuits in various industrial and electronic designs.

This MOSFET offers a low maximum drain-source resistance of 9 milliohms which minimizes conduction losses, supporting efficient power management in compact electrical circuits. The device supports gate voltages ranging from -8 V to +8 V, allowing precise control in switching operations.

Designed to dissipate up to 2.5 W of power, the FDS4465 withstands temperatures ranging from -55°C to 175°C, ensuring stability in challenging environments. Its typical gate charge of 86 nC allows for fast switching speeds, making it suitable for power regulation, DC-DC converters, motor control, and battery management applications.

The physical dimensions (5 mm length x 4 mm width x 1.5 mm height) facilitate integration in compact layouts on printed circuit boards. Though it does not meet automotive standards, it is optimal for industrial electronics, instrumentation, power supplies, and consumer electronics.

With onsemi's commitment to quality, this MOSFET presents a reliable solution for power and electronic component needs across laboratory, manufacturing, and commercial sectors. Designed with a maximum continuous drain current of 13.5 A for handling high current loads.

Operates at a maximum drain-source voltage of 20 V ensuring efficient switching. Compact SOIC package offers a surface mount solution with 8 pins. Features a low maximum drain-source resistance of 9 milliohms to minimize power loss.

Supports gate voltages between -8 V and +8 V with an enhancement channel mode. Maximum power dissipation of 2.5 W suitable for moderate thermal environments. Wide operating temperature range from -55°C to 175°C making it reliable for diverse conditions.

Typical gate charge of 86 nC supports fast switching applications. Physical dimensions include 5 mm length, 4 mm width, and 1.5 mm height for board layout planning. Does not conform to automotive standards but designed for general power semiconductor use.

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