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onsemi N-Channel MOSFET 2.2 A 30 V Enhancement Mode 3-Pin SOT-23 FDN337N

Category MOSFET Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 940μm
Length 2.92mm
Model FDN337N
Width 1.4mm
Mount Type Surface
Series FDN337N
Maximum Operating Temperature 150°C
Package Type SOT-23
Minimum Operating Temperature -55°C
Pin Count 3
Channel Type N
Maximum Continuous Drain Current Id 2.2A
Maximum Drain Source Voltage Vds 30V
Maximum Drain Source Resistance Rds 65mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 500mW
Typical Gate Charge Qg @ Vgs 7nC
Maximum Gate Source Voltage Vgs -8, +8V
Forward Voltage Vf 1.2V

Key Features

  • This MOSFET uses enhancement mode technology for efficient switching.
  • Maximum drain-source resistance of 65 milliohms ensures low loss power conduction.
  • Maximum power dissipation rating of 500 mW supports moderate power applications.
  • Designed for surface mount applications with compact dimensions of 2.92 mm length and 1.4 mm width.
  • Operates reliably within temperature range from -55°C to 150°C.
  • Typical gate charge of 7 nC enables fast switching performance.
  • Maximum gate-source voltage rating of ±8 V safeguards against voltage spikes.
  • Forward voltage drop is 1.2 V, suitable for low voltage power circuits.

Product Description

onsemi FDN337N is an N-Channel MOSFET featuring a maximum continuous drain current of 2.2 A and a maximum drain-source voltage of 30 V. Packaged in a compact 3-pin SOT-23 surface mount form, it uses enhancement mode technology to minimize on-state resistance, optimize switching speed, and ensure robust and reliable performance.

This MOSFET supports a maximum drain-source resistance of 65 milliohms, which contributes to efficient power conduction in switching applications. It is capable of dissipating up to 500 mW of power under normal operating conditions.

The device is designed to operate within an extended temperature range from -55°C to 150°C, making it suitable for use in demanding industrial and electronic environments. Its typical gate charge of 7 nC facilitates rapid switching, enabling improved circuit response times.

The maximum gate-source voltage rating of ±8 V protects the transistor from voltage spikes while the forward voltage drop of 1.2 V aligns with low voltage power circuit requirements. The small dimensions of 2.92 mm length, 1.4 mm width, and 940 μm height ensure it can fit into compact circuit board designs.

This MOSFET is appropriate for a broad range of applications including industrial automation, power management, switching power supplies, and general semiconductor component usage in electronic devices.

This MOSFET uses enhancement mode technology for efficient switching. Maximum drain-source resistance of 65 milliohms ensures low loss power conduction. Maximum power dissipation rating of 500 mW supports moderate power applications.

Designed for surface mount applications with compact dimensions of 2.92 mm length and 1.4 mm width. Operates reliably within temperature range from -55°C to 150°C. Typical gate charge of 7 nC enables fast switching performance.

Maximum gate-source voltage rating of ±8 V safeguards against voltage spikes. Forward voltage drop is 1.2 V, suitable for low voltage power circuits. Optimized for industrial, electronic component, and semiconductor uses.

Package includes 3 pins in a standard surface mount form factor. Explore our extensive catalog for more semiconductors and MOSFET components at EnvMart for your electronic design and manufacturing needs.

onsemi N-Channel MOSFET 2.2 A 30 V Enhancement Mode 3-Pin SOT-23 FDN337N
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Frequently Asked Questions

The maximum continuous drain current for this model is 2.2 A.

This MOSFET has a maximum drain-source voltage rating of 30 V.

The maximum power dissipation rating is 500 mW.

The dimensions of this model are 2.92 mm in length, 1.4 mm in width, and 940 μm in height.

The maximum gate-source voltage rating is ±8 V.

The forward voltage drop is 1.2 V.

It operates reliably within a temperature range from -55°C to 150°C.

The typical gate charge is 7 nC.

This model is designed for surface mount applications.

The maximum drain-source resistance is 65 milliohms.

It is suitable for applications in industrial automation, power management, and switching power supplies.

This model features an N-channel type.

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