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| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 940μm |
| Length | 2.92mm |
| Model | FDN337N |
| Width | 1.4mm |
| Mount Type | Surface |
| Series | FDN337N |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-23 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 2.2A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 65mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 500mW |
| Typical Gate Charge Qg @ Vgs | 7nC |
| Maximum Gate Source Voltage Vgs | -8, +8V |
| Forward Voltage Vf | 1.2V |
onsemi FDN337N is an N-Channel MOSFET featuring a maximum continuous drain current of 2.2 A and a maximum drain-source voltage of 30 V. Packaged in a compact 3-pin SOT-23 surface mount form, it uses enhancement mode technology to minimize on-state resistance, optimize switching speed, and ensure robust and reliable performance.
This MOSFET supports a maximum drain-source resistance of 65 milliohms, which contributes to efficient power conduction in switching applications. It is capable of dissipating up to 500 mW of power under normal operating conditions.
The device is designed to operate within an extended temperature range from -55°C to 150°C, making it suitable for use in demanding industrial and electronic environments. Its typical gate charge of 7 nC facilitates rapid switching, enabling improved circuit response times.
The maximum gate-source voltage rating of ±8 V protects the transistor from voltage spikes while the forward voltage drop of 1.2 V aligns with low voltage power circuit requirements. The small dimensions of 2.92 mm length, 1.4 mm width, and 940 μm height ensure it can fit into compact circuit board designs.
This MOSFET is appropriate for a broad range of applications including industrial automation, power management, switching power supplies, and general semiconductor component usage in electronic devices.
This MOSFET uses enhancement mode technology for efficient switching. Maximum drain-source resistance of 65 milliohms ensures low loss power conduction. Maximum power dissipation rating of 500 mW supports moderate power applications.
Designed for surface mount applications with compact dimensions of 2.92 mm length and 1.4 mm width. Operates reliably within temperature range from -55°C to 150°C. Typical gate charge of 7 nC enables fast switching performance.
Maximum gate-source voltage rating of ±8 V safeguards against voltage spikes. Forward voltage drop is 1.2 V, suitable for low voltage power circuits. Optimized for industrial, electronic component, and semiconductor uses.
Package includes 3 pins in a standard surface mount form factor. Explore our extensive catalog for more semiconductors and MOSFET components at EnvMart for your electronic design and manufacturing needs.
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