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onsemi PowerTrench Type P-Channel MOSFET, 1.5 A, 30 V Enhancement, 3-Pin SOT-23 FDN358P
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 940μm |
| Length | 2.92mm |
| Model | FDN358P |
| Width | 1.4mm |
| Mount Type | Surface |
| Series | PowerTrench |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-23 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 1.5A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 125mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 500mW |
| Typical Gate Charge Qg @ Vgs | 4nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | -1.2V |
Key Features
- This MOSFET features a low maximum drain-source resistance of 125 milliohms.
- Optimized for efficient switching with a typical gate charge of 4 nanocoulombs.
- Supports operating temperatures from -55°C to 150°C for robust performance.
- Equipped with a soft reverse recovery body diode for fast switching applications.
- Maximum power dissipation is rated at 500 milliwatts, suitable for low-power systems.
- Utilizes PowerTrench technology to enhance system efficiency and power density.
- Designed for surface mount applications on printed circuit boards.
- Gate-source voltage rating is from -20 V to +20 V ensuring reliable gate control.
Product Description
onsemi FDN358P PowerTrench Type P-Channel MOSFET is an enhancement mode transistor designed for switching applications requiring low voltage and current ratings. With a maximum continuous drain current of 1.5 A and maximum drain-source voltage of 30 V, this device is ideal for compact power management solutions.
This MOSFET employs advanced PowerTrench technology featuring a shielded-gate structure that reduces the figure of merit (FOM), enabling higher efficiency with lower losses. It has a low forward voltage of -1.2 V and exhibits a soft body diode characteristic which helps eliminate snubber circuits, thereby simplifying designs.
Its compact SOT-23 surface mount package measures 2.92 mm in length, 1.4 mm in width, and 940 µm in height, making it suitable for densely packed circuit boards. The device's gate charge of 4 nC allows for fast switching speeds, relevant for synchronous rectification in AC/DC power supplies and other low power conversion applications.
The FDN358P is rated to operate safely between -55°C to 150°C, supporting a wide range of industrial, commercial, and consumer electronics applications. Its maximum power dissipation of 500 mW ensures reliable operation under appropriate thermal conditions.
This MOSFET is intended for surface mount mounting and features 3 pins commonly used in power switching circuits. Applications include power management in portable devices, battery-powered systems, and low-voltage motor control.
Package contents consist of one FDN358P MOSFET in SOT-23 package. Explore more semiconductor components and related power devices within the Electronics & Electricals category at EnvMart for comprehensive industrial solutions.
Explore more products in our Discrete Semiconductor category.
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Frequently Asked Questions
The maximum continuous drain current for this model is 1.5 A.
It has a maximum drain-source voltage rating of 30 V.
The typical gate charge is 4 nanocoulombs (nC).
The SOT-23 package measures 2.92 mm in length, 1.4 mm in width, and 940 µm in height.
The maximum power dissipation for this MOSFET is rated at 500 milliwatts (mW).
It operates safely between -55°C and 150°C.
This model is designed for surface mount applications.
The maximum gate-source voltage rating is from -20 V to +20 V.
The forward voltage is -1.2 V.
It features a P-Channel type.
It employs PowerTrench technology to improve system efficiency and power density.
This model is suitable for power management in portable devices, battery-powered systems, and low-voltage motor control.
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