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| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 930μm |
| Length | 2.92mm |
| Model | BSS123 |
| Width | 1.3mm |
| Mount Type | Surface |
| Series | PowerTrench |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-23 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Automotive Standard | AEC-Q100, AEC-Q101, AEC-Q200 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 170mA |
| Maximum Drain Source Voltage Vds | 100V |
| Maximum Drain Source Resistance Rds | 6Ω |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 360mW |
| Typical Gate Charge Qg @ Vgs | 1.8nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.3V |
| Nexperia BST82 N-Channel MOSFET, 190 mA, 100 V Enhancement, 3-Pin SOT-23Brand | Nexperia |
onsemi BSS123 PowerTrench N-Channel MOSFET offers a high-performance semiconductor device designed for amplification and switching applications in electronic circuits. This enhancement mode MOSFET supports a maximum continuous drain current of 170 mA and a maximum drain-source voltage of 100 V, enabling its use in moderate power applications requiring low conduction losses. The device is housed in a compact 3-Pin SOT-23 surface mount package with dimensions 2.92 mm length, 1.3 mm width, and 930 μm height, making it ideal for space-constrained designs.
Its low typical gate charge of 1.8 nC allows for fast and efficient switching, while its maximum power dissipation rating of 360 mW ensures thermal reliability. Suitable for operation in extreme temperature environments ranging from -55°C to 150°C, the BSS123 MOSFET meets demanding industrial and automotive requirements. Compliance with automotive standards AEC-Q100, AEC-Q101, and AEC-Q200 confirms its robustness and quality standards.
The device is widely used in industrial electronics, telecommunications, automotive electronics, and power management systems. Its N-Channel enhancement mode operation allows for versatility in designing circuits for signal amplification, load switching, and motor control.
Features enhancement mode operation for switching and amplification. Maximum continuous drain current rated at 170 mA. Maximum drain-source voltage of 100 V supporting high voltage circuits. Low typical gate charge of 1.8 nC for fast switching performance.
Maximum power dissipation of 360 mW suitable for compact designs. Operating temperature range from -55°C to 150°C for reliable performance. Small form factor SOT-23 package provides compact surface mounting. Automotive standards compliance including AEC-Q100, AEC-Q101, and AEC-Q200.
Three-pin design enables easy integration in semiconductor circuits.
This product is suitable for industrial, automotive, and commercial electronics applications requiring reliable switching and low power loss performance. Explore more capacitor and semiconductor solutions from onsemi on EnvMart.
Explore more products in our Discrete Semiconductor category.
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