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Infineon HEXFET Type P-Channel MOSFET 74 A 55 V Enhancement 3-Pin TO-262 IRF4905LPBF

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Infineon HEXFET Type P-Channel MOSFET 74 A 55 V Enhancement 3-Pin TO-262 IRF4905LPBF

Name: Infineon HEXFET Type P-Channel MOSFET 74 A 55 V Enhancement 3-Pin TO-262 IRF4905LPBF
Brand: Infineon
SKU: 124861
Price: 2.06 USD
Availability: InStock

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Category MOSFET Brand Infineon Condition New

Specifications

Country of Origin	India
Brand	Infineon
Height	10.54mm
Length	10.67mm
Model	IRF4905LPBF
Width	4.83mm
Mount Type	Through Hole
Series	HEXFET
Maximum Operating Temperature	175°C
Package Type	TO-262
Minimum Operating Temperature	-55°C
Pin Count	3
Channel Type	Type P
Maximum Continuous Drain Current Id	74A
Maximum Drain Source Voltage Vds	55V
Maximum Drain Source Resistance Rds	20mΩ
Channel Mode	Enhancement
Maximum Power Dissipation Pd	3.8W
Typical Gate Charge Qg @ Vgs	180nC
Maximum Gate Source Voltage Vgs	-20, +20V
Forward Voltage Vf	-1.3V

Key Features

Operates with a 3-Pin TO-262 package suitable for through-hole mounting.
Enhancement mode device optimized for fast switching and low power loss during operation.
Maximum power dissipation of 3.8 W with a high-temperature operating range from -55°C to +175°C.
Typical gate charge of 180 nC ensures efficient circuit responsiveness.
Low maximum drain-source resistance of 20 mΩ reduces conduction losses and heat generation.
Designed with robust gate voltage tolerance of -20 V to +20 V.
Compact size with dimensions approximately 10.67 mm length, 4.83 mm width, and 10.54 mm height.
Reliable for usage in industrial, automotive, and electronic power management circuits.

Product Description

Infineon IRF4905LPBF HEXFET Type P-Channel MOSFET is an advanced semiconductor device engineered for electronic applications requiring efficient power control. With a maximum continuous drain current of 74 A and a drain-source voltage rating of 55 V, it supports demanding power management circuits in automation, automotive, and industrial sectors. The device utilizes an Enhancement channel mode housed in a durable 3-Pin TO-262 package designed for through-hole mounting on standard PCBs.

This MOSFET is distinguished by its low drain-source resistance of 20 mΩ, which significantly reduces conduction losses and enhances energy efficiency. It also features a typical gate charge of 180 nC facilitating rapid switching responses essential in modern electronic designs. The device is built to withstand operating temperatures from -55°C to +175°C, ensuring reliable performance under harsh thermal environments.

Additional benefits include high gate voltage tolerance ranging from -20 V to +20 V, forward voltage of -1.3 V, and a maximum power dissipation of 3.8 W. The compact TO-262 package dimensions make integration into electronic boards seamless.

Ideal for power management in brushless DC motor controls, automotive electronic circuits, and industrial automation systems, the IRF4905LPBF offers robust and dependable operation in an array of applications demanding efficiency and durability.

Operates with a 3-Pin TO-262 package suitable for through-hole mounting. Enhancement mode device optimized for fast switching and low power loss during operation. Maximum power dissipation of 3.8 W with a high-temperature operating range from -55°C to +175°C.

Typical gate charge of 180 nC ensures efficient circuit responsiveness. Low maximum drain-source resistance of 20 mΩ reduces conduction losses and heat generation. Designed with robust gate voltage tolerance of -20 V to +20 V.

Compact size with dimensions approximately 10.67 mm length, 4.83 mm width, and 10.54 mm height. Reliable for usage in industrial, automotive, and electronic power management circuits. Explore more products in the Semiconductor MOSFET category on EnvMart to find compatible components for your industrial and electronic applications.