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Vishay N-Channel MOSFET 14 A 500 V Enhancement Mode 3-Pin TO-247 IRFP450APBF

Category MOSFET Brand Vishay Condition New

Specifications

Country of Origin China
Brand Vishay
Height 20.7mm
Length 15.87mm
Model IRFP450APBF
Width 5.31mm
Mount Type Through Hole
Series IRFP450A
Maximum Operating Temperature 150°C
Package Type TO-247
Minimum Operating Temperature -55°C
Pin Count 3
Channel Type N
Maximum Continuous Drain Current Id 14A
Maximum Drain Source Voltage Vds 500V
Maximum Drain Source Resistance Rds 400mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 190W
Typical Gate Charge Qg @ Vgs 64nC
Maximum Gate Source Voltage Vgs -30, +30V
Forward Voltage Vf 1.4V
N-channel MOSFET,IRFP450A 14A 500VBrand Vishay

Key Features

  • This MOSFET features enhancement mode operation and a low maximum drain-source resistance of 400 mΩ.
  • It supports a maximum power dissipation of 190 W, suitable for high power applications.
  • The device operates reliably between -55°C and 150°C, ensuring durability in harsh environments.
  • The typical gate charge at Vgs is 64 nC, enabling efficient switching performance.
  • Maximum gate-source voltage ranges from -30 V to +30 V permitting flexible gate drive conditions.
  • The package dimensions measure approximately 20.7 mm in height, 15.87 mm in length, and 5.31 mm in width.
  • The forward voltage drop is 1.4 V, supporting efficient conduction when active.
  • This component is designed for through-hole mounting with a three-pin configuration.

Product Description

Vishay IRFP450APBF is a high-performance N-Channel MOSFET designed for industrial and commercial electronic applications. It offers a continuous drain current rating of 14 A and a maximum drain-source voltage of 500 V, making it suitable for various power switching and amplification tasks.

Constructed in a robust TO-247 package with through-hole mounting, this MOSFET ensures easy integration into printed circuit boards and power electronic assemblies. Its enhancement mode channel and low maximum drain-source resistance (400 mΩ) contribute to efficient energy management and reduced power losses.

The device supports a maximum power dissipation of 190 W, facilitating operation in demanding environments. Its operating temperature range from -55 °C to 150 °C further extends its usability in industrial automation, HVAC, motor control, and power supply circuits.

With a typical gate charge of 64 nC at standard gate voltage and a maximum gate-source voltage rating of ±30 V, the IRFP450APBF MOSFET provides fast switching capabilities while maintaining gate control integrity.

The precise physical dimensions - height 20.7 mm, length 15.87 mm, and width 5.31 mm - enable designers to accommodate the device within compact power modules. This product, manufactured in China, does not carry any special certification marks but is built for reliable, consistent performance in electronic power control setups.

This MOSFET features enhancement mode operation and a low maximum drain-source resistance of 400 mΩ. It supports a maximum power dissipation of 190 W, suitable for high power applications. The device operates reliably between -55°C and 150°C, ensuring durability in harsh environments.

The typical gate charge at Vgs is 64 nC, enabling efficient switching performance. Maximum gate-source voltage ranges from -30 V to +30 V permitting flexible gate drive conditions. The package dimensions measure approximately 20.7 mm in height, 15.87 mm in length, and 5.31 mm in width.

The forward voltage drop is 1.4 V, supporting efficient conduction when active. This component is designed for through-hole mounting with a three-pin configuration. Manufactured in China, it complies with standard electronic component quality requirements.

This IRFP450APBF MOSFET by Vishay is ideal for applications in industrial power control, switching regulators, motor drives, and power amplification circuits. Explore Vishay semiconductors and related power electronic components at EnvMart for reliable sourcing and technical support.

Vishay N-Channel MOSFET 14 A 500 V Enhancement Mode 3-Pin TO-247 IRFP450APBF
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Frequently Asked Questions

The maximum continuous drain current for this model is 14 A.

This MOSFET supports a maximum drain-source voltage of 500 V.

It can handle a maximum power dissipation of 190 W, making it suitable for high power applications.

The device operates reliably between -55°C and 150°C.

The package dimensions are approximately 20.7 mm in height, 15.87 mm in length, and 5.31 mm in width.

The maximum gate-source voltage ranges from -30 V to +30 V.

The typical gate charge at Vgs is 64 nC.

This component is designed for through-hole mounting with a three-pin configuration.

The forward voltage drop is 1.4 V, which supports efficient conduction when active.

It features an N-channel configuration, which is typical for enhancement mode operation.

The maximum drain-source resistance is 400 mΩ, contributing to its efficiency in power applications.

This MOSFET is suitable for applications in industrial power control, switching regulators, motor drives, and power amplification circuits.

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