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Infineon HEXFET Type P-Channel MOSFET, 31 A, 55 V, Enhancement Mode, 3-Pin IPAK IRFU5305PBF
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 6.1mm |
| Length | 6.6mm |
| Model | IRFU5305PBF |
| Width | 2.3mm |
| Mount Type | Through Hole |
| Series | HEXFET |
| Maximum Operating Temperature | 175°C |
| Package Type | IPAK |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 31A |
| Maximum Drain Source Voltage Vds | 55V |
| Maximum Drain Source Resistance Rds | 65mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 110W |
| Typical Gate Charge Qg @ Vgs | 63nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | -1.3V |
Key Features
- Maximum continuous drain current of 31 amperes for robust power handling.
- Maximum drain-source voltage of 55 volts suitable for various applications.
- Enhancement mode operation ensures optimal performance.
- Low drain-source resistance of 65 milliohms for energy efficiency.
- Wide gate-source voltage range of -20 to +20 volts offers versatile control.
- Maximum power dissipation rating of 110 watts supports high power loads.
- Compact 3-pin IPAK through-hole package for easy installation.
- Operating temperature range from -55°C to 175°C ensures durability in harsh environments.
Product Description
Infineon IRFU5305PBF HEXFET Type P-Channel MOSFET is engineered to deliver high efficiency and reliability across a broad spectrum of electronic applications. Featuring a maximum continuous drain current of 31 A and a drain-source voltage up to 55 V, this device operates in enhancement mode to ensure optimal switching and conduction performance.
The device boasts a low static drain-to-source resistance of 65 mΩ, minimizing energy losses in circuit designs. Its gate-source voltage range of ±20 V provides versatile control options suitable for demanding power management tasks.
Encased in a compact 3-pin IPAK through-hole package, the MOSFET facilitates space-efficient mounting and reliable heat dissipation, with a maximum power dissipation capacity of 110 W. The robust operating temperature range from -55°C to 175°C enables use in harsh industrial, automotive, and renewable energy environments.
This MOSFET is ideal for power management in consumer electronics, electric vehicles, high-frequency switching power supplies, and renewable energy systems where high current and power ratings are critical. Proper installation and adequate cooling are essential to ensure optimal performance and longevity under high load conditions.
Maximum continuous drain current of 31 A provides strong power handling. Support for drain-source voltage up to 55 V enhances application scope. Low drain-source resistance contributes to high efficiency. Wide gate-to-source voltage range supports versatile device control.
High power dissipation rating of 110 W enables robust operation. Compact 3-pin IPAK packaging is suitable for through-hole mount designs. Wide operating temperature range ensures durability in various environments.
This MOSFET is part of Infineon's trusted HEXFET series, designed for industrial, automotive, and commercial applications. For reliable and efficient MOSFET solutions, explore similar products and related semiconductor components at EnvMart.
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Frequently Asked Questions
The maximum continuous drain current of this model is 31 amperes, allowing for robust power handling in various applications.
This MOSFET supports a maximum drain-source voltage of 55 volts, making it suitable for a wide range of applications.
The gate-source voltage range for this model is from -20 to +20 volts, providing versatile control options.
It features a low static drain-to-source resistance of 65 milliohms, which helps minimize energy losses in circuit designs.
The maximum power dissipation rating is 110 watts, which supports high power loads effectively.
The dimensions of the package are 6.6 mm in length, 2.3 mm in width, and 6.1 mm in height.
This model operates within a temperature range of -55°C to 175°C, ensuring durability in harsh environments.
It is designed for through-hole mounting, which facilitates easy installation in various applications.
This MOSFET is ideal for power management in consumer electronics, electric vehicles, high-frequency switching power supplies, and renewable energy systems.
The channel mode of this device is enhancement, which ensures optimal switching and conduction performance.
The typical gate charge at Vgs is 63 nanocoulombs, which is relevant for switching applications.
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