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Infineon HEXFET Type P-Channel MOSFET, 5.4 A, 30 V Enhancement Mode, 8-Pin SOIC IRF9335TRPBF
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 1.5mm |
| Length | 5mm |
| Model | IRF9335TRPBF |
| Width | 4mm |
| Mount Type | Surface |
| Series | HEXFET |
| Maximum Operating Temperature | 150°C |
| Package Type | SOIC |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 5.4A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 110mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 2.5W |
| Typical Gate Charge Qg @ Vgs | 9.1nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | -1.2V |
| P-Channel MOSFET, 5.4 A, 30 V, 8-Pin SOIC Infineon IRF9335PBFBrand | Infineon |
Key Features
- The HEXFET design delivers low conduction losses to improve system efficiency.
- The MOSFET supports a maximum power dissipation of 2.5 W enabling reliable performance.
- It operates within an extended temperature range of -55°C to 150°C for versatile industrial use.
- The low maximum drain-source resistance (110 mΩ) contributes to reduced heat generation.
- Typical gate charge is 9.1 nC, optimizing switching performance.
- The device has a maximum gate-source voltage rating of -20 V to +20 V for robust gate control.
- Forward voltage is -1.2 V supporting efficient current flow in switching circuits.
- Compact physical dimensions of 5 mm length, 4 mm width, and 1.5 mm height facilitate integration in dense PCBs.
Product Description
Infineon IRF9335TRPBF HEXFET® Type P-Channel MOSFET is designed to deliver efficient power switching performance in compact surface mount packages. Rated for a continuous drain current of 5.4 A and drain-source voltage up to 30 V, it supports demanding power management applications in industrial and electronic equipment.
The enhancement mode MOSFET comes in an 8-pin SOIC package optimized for automated SMT assembly and reliable operation. Its low on-resistance (110 mΩ) minimizes conduction losses, enhancing overall system efficiency.
This device supports a wide operating temperature range from -55°C to 150°C, meeting industrial standard requirements. With a typical gate charge of 9.1 nC and a maximum gate-source voltage rating from -20 V to +20 V, the IRF9335TRPBF facilitates fast switching and protects the device from voltage stress.
The compact form factor (5 mm × 4 mm × 1.5 mm) allows for high-density PCB layouts in power and signal switching circuits. Its maximum power dissipation of 2.5 W ensures robust thermal performance under typical operating conditions.
Applications include power management modules, electronic control units, industrial automation systems, and other circuits requiring reliable P-channel MOSFET switching. The HEXFET technology provides low conduction resistance for efficient operation.
Compact 8-pin SOIC package enables seamless integration in SMT designs. Wide temperature operating range ensures suitability for harsh environments. Robust voltage and current ratings support various power electronic circuits.
Typical gate charge and gate voltage ranges are ideal for fast switching applications. 5.4 A continuous drain current rating balances power and size requirements. Low forward voltage maintains high efficiency in switching functions.
Infineon IRF9335TRPBF is a reliable choice for designing compact, efficient power electronics in industrial and electronic component applications. Browse EnvMart to explore more MOSFET solutions from Infineon and other leading brands suitable for diverse industrial uses.
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Frequently Asked Questions
The maximum continuous drain current for this model is 5.4 A.
It supports a maximum drain-source voltage of 30 V.
The typical gate charge is 9.1 nC, which optimizes its switching performance.
The maximum power dissipation for this model is 2.5 W.
The dimensions are 5 mm in length, 4 mm in width, and 1.5 mm in height.
The maximum gate-source voltage rating is -20 V to +20 V.
It operates within an extended temperature range of -55°C to 150°C.
This model comes in an 8-pin SOIC package, optimized for surface mount technology.
The forward voltage is -1.2 V, which supports efficient current flow in switching circuits.
The maximum drain-source resistance is 110 mΩ, contributing to reduced heat generation.
This model is suitable for power management modules, electronic control units, and industrial automation systems.
It features a P-channel type channel, designed for enhancement mode operation.
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