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onsemi UltraFET N-Channel MOSFET 56 A 100 V Enhancement Mode 3-Pin TO-220 HUF75639P3

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onsemi UltraFET N-Channel MOSFET 56 A 100 V Enhancement Mode 3-Pin TO-220 HUF75639P3

Name: onsemi UltraFET N-Channel MOSFET 56 A 100 V Enhancement Mode 3-Pin TO-220 HUF75639P3
Brand: onsemi
SKU: 119239
Price: 2.02 USD
Availability: InStock

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Category MOSFET Brand onsemi Condition New

Specifications

Country of Origin	India
Brand	onsemi
Height	9.4mm
Length	10.67mm
Model	HUF75639P3
Width	4.83mm
Mount Type	Through Hole
Series	UltraFET
Maximum Operating Temperature	175°C
Package Type	TO-220
Minimum Operating Temperature	-55°C
Pin Count	3
Channel Type	N
Maximum Continuous Drain Current Id	56A
Maximum Drain Source Voltage Vds	100V
Maximum Drain Source Resistance Rds	25mΩ
Channel Mode	Enhancement
Maximum Power Dissipation Pd	200W
Typical Gate Charge Qg @ Vgs	110nC
Maximum Gate Source Voltage Vgs	-20, +20V

Key Features

Supports a maximum continuous drain current of 56 amperes.
Maximum drain-source voltage rating is 100 volts.
Designed with a 3-Pin TO-220 package for through-hole mounting.
Features an enhancement type channel mode for efficient switching.
Maximum drain-source resistance is 25 milliohms, ensuring low power dissipation.
Capable of dissipating up to 200 watts of power effectively.
Operates reliably from -55°C to a maximum of 175°C.
Typical gate charge is 110 nanocoulombs at a gate-source voltage of 10 volts.

Product Description

onsemi HUF75639P3 is an UltraFET N-Channel MOSFET designed for high-efficiency power conversion and switching applications. With a maximum continuous drain current of 56 A and a drain-source voltage rating of 100 V, this MOSFET operates in enhancement mode to offer excellent performance in various electronic circuits.

The device comes in a 3-pin TO-220 package that supports through-hole mounting, making it convenient for industrial and commercial electronic assemblies.

It features a maximum drain-source resistance (Rds) of 25 milliohms to minimize conduction losses and a power dissipation capacity of up to 200 watts, ensuring robust operation under heavy loads. Its operational temperature range extends from -55°C to 175°C, suitable for demanding environments.

The UltraFET MOSFET also benefits from a typical gate charge of 110 nanocoulombs at Vgs=10 V, enabling fast switching speeds with reduced power consumption. The maximum gate-source voltage rating of -20 to +20 volts protects the gate from voltage extremes.

Compact physical dimensions of 10.67 mm by 9.4 mm by 4.83 mm allow for space-efficient PCB layouts. Maximum continuous drain current of 56 A for heavy-duty applications. 100 V voltage rating suitable for a wide range of power electronics.

Enhancement mode channel for efficient control. Low Rds(on) value of 25 mΩ for power loss reduction. TO-220 through-hole package for easy mounting and heat dissipation. High power dissipation rating of 200 W for robust performance.

Wide operating temperature range from -55°C to 175°C for reliability. Fast switching with typical gate charge of 110 nC. Safe gate voltage limits with ±20 V rating. Compact dimensions supporting optimized PCB designs.

This MOSFET is ideal for use in industrial power supplies, motor drivers, DC-DC converters, and advanced power management systems requiring high current and voltage handling capacities with efficient switching.

Explore more onsemi semiconductor products and equivalent MOSFETs for your electronic projects and manufacturing requirements at EnvMart.