$23.16
$20.22
Tax included
Previous
Next
Share
Free Delivery in India | Lowest Global Shipping Charges
24/7 Customer Support
Shop with confidence knowing that our 24/7 Customer Support is always available to assist with any inquiries
Save up to 28% with GST Input
Avail maximum benefits from input tax mechanism on all your Business Invoices. Get GST Invoices on your business purchases. And 0% Taxes on all worldwide deliveries
# Lowest Price Challenge
If you find this product anywhere at lower cost than us. Call us and we will not only match the price but also give a complimentary coupon
100% Original Products
Shop with assurance, as each product we offer is 100% original, ensuring quality and authenticity with every purchase
Taiwan Semiconductor Dual N-Channel Common Drain Power MOSFET, 6.5 A, 20 V, Enhancement Mode, 8-Pin TSSOP TSM6968DCA RVG
Specifications
| Country of Origin | India |
|---|---|
| Brand | Taiwan Semiconductor |
| Height | 1.05mm |
| Length | 4.5mm |
| Model | TSM6968DCA RVG |
| Width | 3.1mm |
| Mount Type | Surface |
| Series | TSM6968D |
| Maximum Operating Temperature | 150°C |
| Package Type | TSSOP |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | ESD Protected 2KV |
| Pin Count | 8 |
| Number of Elements per Chip | 2 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 6.5A |
| Maximum Drain Source Voltage Vds | 20V |
| Maximum Drain Source Resistance Rds | 40mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 1.04W |
| Typical Gate Charge Qg @ Vgs | 20nC |
| Maximum Gate Source Voltage Vgs | -12, +12V |
| Forward Voltage Vf | 1.2V |
| Transistor Configuration | Common Drain |
Key Features
- Features dual N-Channel MOSFET configuration in a compact 8-pin TSSOP package.
- Supports a maximum continuous drain current of 6.5 amperes.
- Operates at a maximum drain source voltage of 20 volts.
- Enhancement mode channel with a maximum drain source resistance of 40 milliohms.
- Typical gate charge of 20 nanoCoulombs at gate source voltage, supporting efficient switching.
- Provides forward voltage of 1.2 volts ensuring low conduction losses.
- Rated for operation from -55°C to a maximum of 150°C for reliable industrial use.
- Designed with ESD protection up to 2 kV to safeguard against electrostatic discharge.
Product Description
Taiwan Semiconductor TSM6968DCA RVG is a dual N-Channel common drain Power MOSFET designed for high-performance electronic applications. It delivers up to 6.5 amperes of continuous drain current and withstands a maximum drain source voltage of 20 volts. This enhancement mode MOSFET features a low resistance of 40 milliohms ensuring efficient power handling with minimal losses.
The transistor is housed in a compact 8-pin TSSOP surface mount package, measuring 4.5 mm in length, 3.1 mm in width, and 1.05 mm in height, suitable for modern PCB designs with limited space. Its operating temperature range from -55°C to 150°C allows for reliable performance in demanding industrial and automotive environments despite the automotive standard marked as 'No'.
Key electrical characteristics include a typical gate charge of 20 nanoCoulombs and forward voltage of 1.2 volts that contribute to fast switching and low conduction losses. The device is also equipped with 2 kV ESD protection to protect sensitive circuits against electrostatic discharge damage.
This dual-channel MOSFET is ideal for use in power management, motor control, and amplification circuits for industrial, manufacturing, automotive testing, and other electronic applications requiring robust MOSFET devices. The TSM6968D series is well-regarded for its reliable performance in discrete semiconductor applications.
Features dual N-Channel MOSFET configuration in an 8-pin TSSOP package. Maximum continuous drain current of 6.5 A ideal for moderate power applications. Low maximum drain source resistance of 40 milliohms enhances efficiency.
Supports gate voltages up to ±12 V for reliable switching control. High maximum operating temperature of 150°C enables industrial usage. Compact dimensions optimize printed circuit board space. ESD protection at 2 kV reduces risk of static damage to device.
Surface mount package suitable for automated PCB assembly processes. Explore the full range of Taiwan Semiconductor MOSFETs and other discrete semiconductors at EnvMart for your electronic component needs.
Looking to purchase in bulk?
- Purchase item in bulk quantity
- Get best price for your business
Frequently Asked Questions
The maximum continuous drain current for this model is 6.5 amperes.
It can withstand a maximum drain source voltage of 20 volts.
The typical gate charge is 20 nanoCoulombs at the gate source voltage.
The maximum drain source resistance is 40 milliohms, which enhances efficiency.
This model has dimensions of 4.5 mm in length, 3.1 mm in width, and 1.05 mm in height.
The operating temperature range is from -55°C to a maximum of 150°C.
It comes in an 8-pin TSSOP surface mount package.
The forward voltage is rated at 1.2 volts, ensuring low conduction losses.
It is designed with ESD protection up to 2 kV to safeguard against electrostatic discharge.
The maximum gate source voltage is ±12 volts, allowing for reliable switching control.
This dual-channel MOSFET is suitable for power management, motor control, and amplification circuits in various electronic applications.
This model features 2 elements per chip in its dual N-Channel configuration.
Related Products
Other Products from this brand
Recently Viewed Products
$23.16
$20.22
Save 12.7%
Tax included
Quantity
Global Payments 140+ Countries
Global Shipping Fedex/UPS/DHL/Aramex/
BlueDart/Delhivery/DP World
24/7 Customer Support Email/Chat/Telephonic Support
Comments (0)
Your review appreciation cannot be sent
Report comment
Report sent
Your report cannot be sent