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Taiwan Semiconductor Dual N-Channel Common Drain Power MOSFET, 6.5 A, 20 V, Enhancement Mode, 8-Pin TSSOP TSM6968DCA RVG

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Taiwan Semiconductor Dual N-Channel Common Drain Power MOSFET, 6.5 A, 20 V, Enhancement Mode, 8-Pin TSSOP TSM6968DCA RVG

Name: Taiwan Semiconductor Dual N-Channel Common Drain Power MOSFET, 6.5 A, 20 V, Enhancement Mode, 8-Pin TSSOP TSM6968DCA RVG
Brand: Taiwan Semiconductor
SKU: 117718

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Category Power MOSFET Brand Taiwan Semiconductor Condition New

Specifications

Country of Origin	India
Brand	Taiwan Semiconductor
Height	1.05mm
Length	4.5mm
Model	TSM6968DCA RVG
Width	3.1mm
Mount Type	Surface
Series	TSM6968D
Maximum Operating Temperature	150°C
Package Type	TSSOP
Minimum Operating Temperature	-55°C
Standards/Approvals	ESD Protected 2KV
Pin Count	8
Number of Elements per Chip	2
Channel Type	N
Maximum Continuous Drain Current Id	6.5A
Maximum Drain Source Voltage Vds	20V
Maximum Drain Source Resistance Rds	40mΩ
Channel Mode	Enhancement
Maximum Power Dissipation Pd	1.04W
Typical Gate Charge Qg @ Vgs	20nC
Maximum Gate Source Voltage Vgs	-12, +12V
Forward Voltage Vf	1.2V
Transistor Configuration	Common Drain

Key Features

Features dual N-Channel MOSFET configuration in a compact 8-pin TSSOP package.
Supports a maximum continuous drain current of 6.5 amperes.
Operates at a maximum drain source voltage of 20 volts.
Enhancement mode channel with a maximum drain source resistance of 40 milliohms.
Typical gate charge of 20 nanoCoulombs at gate source voltage, supporting efficient switching.
Provides forward voltage of 1.2 volts ensuring low conduction losses.
Rated for operation from -55°C to a maximum of 150°C for reliable industrial use.
Designed with ESD protection up to 2 kV to safeguard against electrostatic discharge.

Product Description

Taiwan Semiconductor TSM6968DCA RVG is a dual N-Channel common drain Power MOSFET designed for high-performance electronic applications. It delivers up to 6.5 amperes of continuous drain current and withstands a maximum drain source voltage of 20 volts. This enhancement mode MOSFET features a low resistance of 40 milliohms ensuring efficient power handling with minimal losses.

The transistor is housed in a compact 8-pin TSSOP surface mount package, measuring 4.5 mm in length, 3.1 mm in width, and 1.05 mm in height, suitable for modern PCB designs with limited space. Its operating temperature range from -55°C to 150°C allows for reliable performance in demanding industrial and automotive environments despite the automotive standard marked as 'No'.

Key electrical characteristics include a typical gate charge of 20 nanoCoulombs and forward voltage of 1.2 volts that contribute to fast switching and low conduction losses. The device is also equipped with 2 kV ESD protection to protect sensitive circuits against electrostatic discharge damage.

This dual-channel MOSFET is ideal for use in power management, motor control, and amplification circuits for industrial, manufacturing, automotive testing, and other electronic applications requiring robust MOSFET devices. The TSM6968D series is well-regarded for its reliable performance in discrete semiconductor applications.

Features dual N-Channel MOSFET configuration in an 8-pin TSSOP package. Maximum continuous drain current of 6.5 A ideal for moderate power applications. Low maximum drain source resistance of 40 milliohms enhances efficiency.

Supports gate voltages up to ±12 V for reliable switching control. High maximum operating temperature of 150°C enables industrial usage. Compact dimensions optimize printed circuit board space. ESD protection at 2 kV reduces risk of static damage to device.

Surface mount package suitable for automated PCB assembly processes. Explore the full range of Taiwan Semiconductor MOSFETs and other discrete semiconductors at EnvMart for your electronic component needs.