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Infineon HEXFET N-Channel MOSFET 60 V 84 A Enhancement Mode 3-Pin TO-220 IRF1010EZPBF
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 16.51mm |
| Length | 10.67mm |
| Model | IRF1010EZPBF |
| Width | 4.83mm |
| Mount Type | Through Hole |
| Series | HEXFET |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 84A |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 8.5mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 140W |
| Typical Gate Charge Qg @ Vgs | 58nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.3V |
Key Features
- Designed for enhancement mode operation with a 3-pin TO-220 package.
- Features low drain-source resistance of 8.5 milliohms to reduce conduction losses.
- Capable of handling continuous drain currents up to 84 amperes.
- Supports a maximum drain-source voltage of 60 volts for robust switching applications.
- Maximum power dissipation rating of 140 watts ensures efficient thermal handling.
- Operating temperature ranges from -55°C to 175°C for reliable performance under extreme conditions.
- Compact dimensions with a height of 16.51 mm and width of 4.83 mm facilitate versatile mounting.
- Typical gate charge of 58 nanoCoulombs supports fast switching speeds.
Product Description
Infineon IRF1010EZPBF is a HEXFET N-Channel MOSFET designed for powerful switching performance and high efficiency in industrial electronic circuits.
Featuring an enhancement channel mode and packaged in a 3-pin TO-220 through-hole form factor, this device suits applications requiring high continuous current up to 84 A and voltage operation up to 60 V.
The MOSFET provides a low drain-source resistance (8.5 mΩ), minimizing power loss and improving thermal efficiency with a maximum power dissipation of 140 W. Operating temperature ranges from -55°C to 175°C allow use in demanding environmental conditions.
Its typical gate charge of 58 nC and gate-source voltage limits of ±20 V enable reliable and fast switching in power regulation and motor controls. Compact size with dimensions 16.51 mm height, 10.67 mm length, and 4.83 mm width allows flexible PCB layouts.
Enhancement mode N-Channel MOSFET in TO-220 package. Maximum continuous drain current (Id): 84 A. Maximum drain-source voltage (Vds): 60 V. Drain-source resistance (Rds): 8.5 milliohms. Maximum power dissipation (Pd): 140 watts.
Operating temperature range: -55°C to 175°C. Gate charge (Qg): 58 nanoCoulombs at Vgs. Gate-source voltage rating: ±20 V. Dimensions: Height 16.51 mm, Length 10.67 mm, Width 4.83 mm.
This MOSFET is suitable for industrial, power regulation, automotive electronics (non-AEC-Q101), and other high-efficiency semiconductor applications requiring strong current capacity and thermal reliability.
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Frequently Asked Questions
The maximum continuous drain current for this model is 84 A.
It supports a maximum drain-source voltage of 60 V.
The drain-source resistance is 8.5 milliohms, which helps reduce conduction losses.
The maximum power dissipation rating is 140 watts, ensuring efficient thermal handling.
The dimensions are 16.51 mm in height, 10.67 mm in length, and 4.83 mm in width.
It operates within a temperature range of -55°C to 175°C.
The typical gate charge is 58 nanoCoulombs at the specified gate-source voltage.
This MOSFET uses a through-hole mounting type.
The gate-source voltage rating is ±20 V.
It is suitable for industrial, power regulation, and automotive electronics applications requiring high efficiency.
This model features an N-channel enhancement mode.
The country of origin for this MOSFET is India.
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