Infineon BSC0 N-Channel MOSFET, 381 A, 100 V, 8-Pin SuperSO8 5 x 6 DSC BSC014N06NSSCATMA1

Infineon BSC014N06NSSCATMA1 N-Channel MOSFET is a high-performance power semiconductor device engineered for demanding power switching applications. It supports a maximum continuous drain current of 381 amperes and a drain-source voltage rating of 100 volts, suitable for robust power management in industrial and commercial electronics.

The MOSFET is housed in an 8-pin SuperSO8 5 x 6 DSC surface-mount package, facilitating compact and efficient board designs. Its low on-resistance of 0.7 milliohm effectively reduces conduction losses and improves overall system efficiency. With a maximum power dissipation of 81 watts, the device allows continuous operation under heavy load conditions.

The device operates reliably across a wide temperature range from -55°C to 175°C, ensuring durability under harsh environmental conditions. A typical gate charge of 80 nanocoulombs at Vgs enhances switching speed and energy efficiency. The gate-source voltage rating of 20 volts supports substantial drive voltages for effective control. The forward voltage drop of about 1 volt is factored into conduction loss calculations for optimized performance.

Typical applications include high-current motor drive stages, DC-DC converter output switching, battery management systems in power electronics, and power distribution modules in server systems. Its surface-mount configuration allows integration into modern compact PCB assemblies.

This device complies with RoHS standards but does not hold specific automotive certifications. It is ideally suited for industrial, laboratory, HVAC, manufacturing, and commercial power electronics sectors.

This MOSFET features a low on-resistance of 0.7 milliohm to reduce power loss. It supports continuous drain current up to 381 amperes for heavy load applications. Capable of handling drain-source voltages of up to 100 volts for high-voltage switching.

Packaged in an 8-pin SuperSO8 5 x 6 DSC surface-mount format. Maximum power dissipation rating of 81 watts for sustained operation. Operating temperature range from -55°C to 175°C for broad environmental tolerance. Typical gate charge of 80 nanocoulombs facilitates efficient switching.

Gate-source voltage withstand rating of 20 volts supports reliable drive voltages. Forward voltage drop of approximately 1 volt contributes to conduction loss analysis. Explore more power semiconductor devices and components from EnvMart's Electronics & Electricals catalog.

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