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Infineon BSZ Type N-Channel MOSFET 212 A 40 V 8-Pin PQFN BSZ018NE2LSATMA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Model | BSZ018NE2LSATMA1 |
| Mount Type | Surface |
| Series | BSZ |
| Maximum Operating Temperature | 175°C |
| Package Type | PQFN |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Pin Count | 8 |
| Channel Type | Type N |
| Maximum Continuous Drain Current Id | 212A |
| Maximum Drain Source Voltage Vds | 40V |
| Maximum Drain Source Resistance Rds | 0.7mΩ |
| Channel Mode | N |
| Maximum Power Dissipation Pd | 81W |
| Typical Gate Charge Qg @ Vgs | 80nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1V |
Key Features
- Maximum continuous drain current of 212 A ensures robust power handling.
- Maximum drain-source voltage of 40 V suitable for medium-voltage applications.
- Surface mount PQFN package with 8 pins enables compact PCB integration.
- Very low drain-source resistance of 0.7 mΩ minimizes power loss.
- Maximum power dissipation rating of 81 W allows high efficiency switching.
- Typical gate charge of 80 nC supports fast switching response.
- Wide temperature operation range from -55°C up to 175°C for reliable performance.
- Gate-source voltage tolerance up to 20 V enhances design flexibility.
Product Description
Infineon BSZ018NE2LSATMA1 is a high-performance N-Channel MOSFET designed for power conversion applications requiring efficient switching and high current capacity. This device is housed in a compact 8-pin PQFN surface-mount package, enabling high density PCB layouts.
The MOSFET supports a maximum continuous drain current of 212 A and a maximum drain-source voltage of 40 V, making it suitable for medium-voltage power management circuits. Its very low drain-source resistance of 0.7 mΩ significantly reduces conduction losses, improving overall system efficiency.
The maximum power dissipation rating of 81 W enables handling of substantial power loads. With a typical gate charge of 80 nC at Vgs, the device ensures fast switching performance, reducing switching losses in high-frequency buck converter designs.
Engineered for a wide operating temperature range from -55°C to 175°C, the MOSFET is reliable for harsh industrial and automotive environments. The gate-source voltage tolerance of 20 V provides design robustness against voltage spikes.
This product meets RoHS environmental standards, ensuring compliance with global regulations. It is optimized for high-performance buck converter applications in automotive, industrial power, and electronic device manufacturing sectors.
Maximum continuous drain current: 212 A. Maximum drain-source voltage: 40 V. Surface mount PQFN package with 8 pins. Low on-resistance of 0.7 mΩ for high efficiency. Power dissipation rating of 81 W. Typical gate charge of 80 nC at Vgs.
Operating temperature range: -55°C to 175°C. Gate-source voltage max 20 V. RoHS compliant. Ideal for automotive and industrial buck converters. Explore more Infineon semiconductor products and advanced MOSFET solutions at EnvMart to support your industrial, automotive, and electronic applications.
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Frequently Asked Questions
The maximum continuous drain current of this model is 212 A, ensuring robust power handling capabilities.
This MOSFET supports a maximum drain-source voltage of 40 V, suitable for medium-voltage applications.
It is housed in a compact 8-pin PQFN surface-mount package, allowing for high-density PCB integration.
The drain-source resistance is very low at 0.7 mΩ, which minimizes power loss and enhances efficiency.
The maximum power dissipation rating for this MOSFET is 81 W, enabling it to handle substantial power loads effectively.
The typical gate charge at Vgs is 80 nC, which supports fast switching response in applications.
This MOSFET operates within a wide temperature range from -55°C to 175°C, making it suitable for harsh environments.
The gate-source voltage tolerance for this model is up to 20 V, providing design flexibility against voltage spikes.
Yes, this MOSFET meets RoHS environmental standards, ensuring compliance with global regulations.
It is optimized for high-performance buck converter applications in automotive, industrial power, and electronic device manufacturing sectors.
The forward voltage for this model is 1 V, which is relevant for specific switching applications.
This model is an N-channel MOSFET, suitable for various power management applications.
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