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| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Model | BSC146N10LS5ATMA1 |
| Mount Type | Surface |
| Series | BSC |
| Maximum Operating Temperature | 175°C |
| Package Type | SuperSO8 5 x 6 |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Pin Count | 8 |
| Channel Type | Type N |
| Maximum Continuous Drain Current Id | 381A |
| Maximum Drain Source Voltage Vds | 40V |
| Maximum Drain Source Resistance Rds | 0.7mΩ |
| Channel Mode | N |
| Maximum Power Dissipation Pd | 81W |
| Typical Gate Charge Qg @ Vgs | 80nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1V |
Infineon BSC146N10LS5ATMA1 is a high-performance N-Channel MOSFET designed for switching and conducting high currents in power electronic circuits. It features a robust 8-pin SuperSO8 5 x 6 mm surface mount package that supports standard automated PCB assembly processes including pick-and-place and reflow soldering.
The device supports a maximum continuous drain current of 381 A, enabling it to handle demanding power loads efficiently with a low drain-source resistance (Rds(on)) of 0.7 mΩ, reducing conduction losses significantly. With a maximum drain-source voltage rating of 40 V, it offers reliable operation in low-voltage power stages.
This MOSFET supports a maximum power dissipation of 81 W, allowing it to sustain high power applications under load without thermal failure. It operates effectively across a wide temperature range from -55 °C to 175 °C, suitable for harsh industrial and commercial environments.
The typical gate charge (Qg) of 80 nC facilitates a balance between switching speed and drive power requirements. A gate-source voltage tolerance of 20 V protects the device against common voltage excursions, adding to its durability.
Infineon’s product complies with RoHS standards, making it suitable for designs that require regulatory compliance regarding environmental safety.
Typical applications include high-current DC-DC converters, motor driver circuits requiring sustained current, parallel operation in server power distribution, and load switching in industrial power modules. Its surface-mount package and high current capability make it an excellent choice for compact power electronics.
Maximum continuous drain current: 381 A. Drain-source voltage: 40 V. Drain-source resistance (Rds(on)): 0.7 mΩ. Power dissipation rating: 81 W. Operating temperature range: -55 °C to 175 °C. Package type: 8-pin SuperSO8 5 x 6 mm surface mount.
Gate charge: 80 nC typical. Gate-source max voltage: 20 V. RoHS compliant semiconductor component. Discover more high-quality MOSFET products and related electronic components at EnvMart for industrial, commercial, and development applications.
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