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Infineon IPL Type N-Channel MOSFET 21 A 650 V Enhancement 5-Pin ThinPAK 8x8 IPL65R130CFD7AUMA1

Category MOSFET Brand Infineon Condition New

Specifications

Country of Origin India
Brand Infineon
Length 8.1mm
Model IPL65R130CFD7AUMA1
Mount Type Surface
Series IPL
Maximum Operating Temperature 150°C
Package Type ThinPAK 8x8
Minimum Operating Temperature -40°C
Standards/Approvals RoHS
Pin Count 5
Automotive Standard AEC-Q101
Channel Type Type N
Maximum Continuous Drain Current Id 21A
Maximum Drain Source Voltage Vds 650V
Maximum Drain Source Resistance Rds 95mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 171W
Typical Gate Charge Qg @ Vgs 80nC
Maximum Gate Source Voltage Vgs 30V
Forward Voltage Vf 1V

Key Features

  • This MOSFET features a maximum continuous drain current of 21 amperes.
  • It supports a maximum drain-source voltage of 650 volts for high-voltage operations.
  • The device uses an enhancement mode channel for improved switching performance.
  • Typical gate charge is 80 nanocoulombs, optimizing switching speed and efficiency.
  • Capable of dissipating up to 171 watts of power under operating conditions.
  • It has a low drain-source resistance of 95 milliohms, reducing conduction losses.
  • Designed with a compact ThinPAK 8x8 surface mount package featuring 5 pins.
  • Operates reliably in temperatures from -40°C up to 150°C for demanding environments.

Product Description

The Infineon IPL65R130CFD7AUMA1 is a high-performance N-Channel MOSFET featuring a maximum continuous drain current of 21 A and a maximum drain-source voltage of 650 V. Housed in a 5-pin ThinPAK 8x8 surface mount package, this device delivers superior efficiency and power density suitable for critical industrial environments.

Designed for resonant topologies in applications such as server power supplies, telecom infrastructure, solar power systems, and electric vehicle charging stations, it offers significant improvements in switching losses and full-load efficiency compared to previous generations and competitive components.

Key attributes include an enhancement-mode channel, typical gate charge of 80 nC, and a low drain-source resistance of 95 mΩ, all contributing to optimized switching behavior and thermal management. The MOSFET supports a high maximum power dissipation rating of 171 W, enabling it to handle high power loads reliably within a broad operating temperature range of -40°C to 150°C.

In addition to RoHS compliance, this device conforms to automotive-grade AEC-Q101 standards, ensuring robustness for automotive and industrial applications where enhanced durability and reliability are critical.

This MOSFET features a maximum continuous drain current of 21 amperes. It supports a maximum drain-source voltage of 650 volts for high-voltage operations. The device uses an enhancement mode channel for improved switching performance.

Typical gate charge is 80 nanocoulombs, optimizing switching speed and efficiency. Capable of dissipating up to 171 watts of power under operating conditions. It has a low drain-source resistance of 95 milliohms, reducing conduction losses.

Designed with a compact ThinPAK 8x8 surface mount package featuring 5 pins. Operates reliably in temperatures from -40°C up to 150°C for demanding environments. Complies with RoHS standards and meets automotive grade AEC-Q101 certification.

Ideal for use in industrial power supplies, electric vehicle chargers, solar inverters, and telecommunication power modules, the Infineon IPL65R130CFD7AUMA1 provides a high-efficiency solution that enhances overall system performance.

Discover more related semiconductor solutions and power modules within the EnvMart catalog to optimize your engineering projects and manufacturing processes.

Infineon IPL Type N-Channel MOSFET 21 A 650 V Enhancement 5-Pin ThinPAK 8x8 IPL65R130CFD7AUMA1
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Frequently Asked Questions

The Infineon IPL65R130CFD7AUMA1 has a maximum continuous drain current of 21 amperes.

It supports a maximum drain-source voltage of 650 volts, suitable for high-voltage applications.

The typical gate charge is 80 nanocoulombs, which optimizes switching speed and efficiency.

It is capable of dissipating up to 171 watts under operating conditions.

The device has a low drain-source resistance of 95 milliohms, which helps reduce conduction losses.

It operates reliably in temperatures ranging from -40°C to 150°C, making it suitable for demanding environments.

This model is housed in a ThinPAK 8x8 surface mount package with 5 pins.

It conforms to the automotive-grade AEC-Q101 standard, ensuring robustness for automotive applications.

Yes, the Infineon IPL65R130CFD7AUMA1 complies with RoHS standards.

It uses an enhancement mode N-channel configuration for improved switching performance.

The maximum gate-source voltage is 30 volts, which is critical for its operation.

It is designed for applications such as server power supplies, telecom infrastructure, solar power systems, and electric vehicle charging stations.

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