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| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Length | 8.1mm |
| Model | IPL65R130CFD7AUMA1 |
| Mount Type | Surface |
| Series | IPL |
| Maximum Operating Temperature | 150°C |
| Package Type | ThinPAK 8x8 |
| Minimum Operating Temperature | -40°C |
| Standards/Approvals | RoHS |
| Pin Count | 5 |
| Automotive Standard | AEC-Q101 |
| Channel Type | Type N |
| Maximum Continuous Drain Current Id | 21A |
| Maximum Drain Source Voltage Vds | 650V |
| Maximum Drain Source Resistance Rds | 95mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 171W |
| Typical Gate Charge Qg @ Vgs | 80nC |
| Maximum Gate Source Voltage Vgs | 30V |
| Forward Voltage Vf | 1V |
The Infineon IPL65R130CFD7AUMA1 is a high-performance N-Channel MOSFET featuring a maximum continuous drain current of 21 A and a maximum drain-source voltage of 650 V. Housed in a 5-pin ThinPAK 8x8 surface mount package, this device delivers superior efficiency and power density suitable for critical industrial environments.
Designed for resonant topologies in applications such as server power supplies, telecom infrastructure, solar power systems, and electric vehicle charging stations, it offers significant improvements in switching losses and full-load efficiency compared to previous generations and competitive components.
Key attributes include an enhancement-mode channel, typical gate charge of 80 nC, and a low drain-source resistance of 95 mΩ, all contributing to optimized switching behavior and thermal management. The MOSFET supports a high maximum power dissipation rating of 171 W, enabling it to handle high power loads reliably within a broad operating temperature range of -40°C to 150°C.
In addition to RoHS compliance, this device conforms to automotive-grade AEC-Q101 standards, ensuring robustness for automotive and industrial applications where enhanced durability and reliability are critical.
This MOSFET features a maximum continuous drain current of 21 amperes. It supports a maximum drain-source voltage of 650 volts for high-voltage operations. The device uses an enhancement mode channel for improved switching performance.
Typical gate charge is 80 nanocoulombs, optimizing switching speed and efficiency. Capable of dissipating up to 171 watts of power under operating conditions. It has a low drain-source resistance of 95 milliohms, reducing conduction losses.
Designed with a compact ThinPAK 8x8 surface mount package featuring 5 pins. Operates reliably in temperatures from -40°C up to 150°C for demanding environments. Complies with RoHS standards and meets automotive grade AEC-Q101 certification.
Ideal for use in industrial power supplies, electric vehicle chargers, solar inverters, and telecommunication power modules, the Infineon IPL65R130CFD7AUMA1 provides a high-efficiency solution that enhances overall system performance.
Discover more related semiconductor solutions and power modules within the EnvMart catalog to optimize your engineering projects and manufacturing processes.
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