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Infineon IPL 29 A 650 V N-Channel MOSFET, Enhancement Mode, 5-Pin ThinPAK 8x8 IPL65R095CFD7AUMA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Length | 8.1mm |
| Model | IPL65R095CFD7AUMA1 |
| Mount Type | Surface |
| Series | IPL |
| Maximum Operating Temperature | 150°C |
| Package Type | ThinPAK 8x8 |
| Minimum Operating Temperature | -40°C |
| Standards/Approvals | RoHS |
| Pin Count | 5 |
| Automotive Standard | AEC-Q101 |
| Channel Type | Type N |
| Maximum Continuous Drain Current Id | 29A |
| Maximum Drain Source Voltage Vds | 650V |
| Maximum Drain Source Resistance Rds | 95mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 171W |
| Typical Gate Charge Qg @ Vgs | 80nC |
| Maximum Gate Source Voltage Vgs | 30V |
| Forward Voltage Vf | 1V |
Key Features
- The device has a 5-pin ThinPAK 8x8 surface mount package suitable for industrial applications.
- Maximum power dissipation is rated at 171 W for efficient thermal handling.
- Typical gate charge is 80 nC at Vgs of 10 V, reducing switching losses.
- Operates reliably between -40° C and 150° C operating temperature ranges.
- Features a low Rds(on) of 95 mΩ for enhanced conduction efficiency.
- Designed to meet RoHS and AEC-Q101 automotive standards.
- Used in applications such as servers, telecom, solar inverters, and electric vehicle charging stations.
Product Description
Infineon IPL65R095CFD7AUMA1 is a 650 V CoolMOS™ CFD7 super junction N-channel MOSFET implemented in a ThinPAK 8x8 5-pin surface mount package. It supports a maximum continuous drain current of 29 A in enhancement mode. This device demonstrates significant efficiency improvements suitable for industrial applications including server power supplies, telecom equipment, solar inverters, and electric vehicle charging infrastructure.
The MOSFET features a maximum power dissipation rating of 171 W and typical gate charge of 80 nC at 10 V gate voltage, resulting in reduced switching losses and improved full-load efficiency. The 95 mΩ maximum drain-source resistance minimizes conduction losses while ensuring reliable operation over a wide temperature range from -40° C to 150° C.
Infineon's IPL65R095CFD7AUMA1 device is compliant with RoHS regulations and meets the automotive AEC-Q101 standard for enhanced reliability. Its thin package form factor supports compact designs with high power density.
The product is engineered as a successor to the CFD2 SJ MOSFET family, offering reduced gate charge, better turn-off behavior, and lower reverse recovery charge. These improvements provide additional safety margin and elevated efficiency in designs requiring enhanced bus voltage tolerances.
The device supports a maximum gate-source voltage of 30 V and a forward voltage of 1 V. Length dimension for package is 8.1 mm, allowing for compact PCB layouts. Ideal for high-frequency resonant topologies in industrial power supplies and converters.
Industrial use cases include applications in server power supplies, telecom infrastructure, solar energy systems, and electric vehicle charging stations, where power density, switching efficiency, and thermal performance are critical.
Explore more Infineon MOSFET products and related semiconductor components on EnvMart for your industrial and electronic component needs.
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Frequently Asked Questions
The maximum continuous drain current for the IPL65R095CFD7AUMA1 is 29 A in enhancement mode.
This model has a maximum power dissipation rating of 171 W, which supports efficient thermal handling.
It operates reliably between -40°C and 150°C, making it suitable for various industrial applications.
The typical gate charge at a gate-source voltage (Vgs) of 10 V is 80 nC, which helps reduce switching losses.
The maximum drain-source resistance (Rds(on)) is 95 mΩ, enhancing conduction efficiency.
It comes in a ThinPAK 8x8 surface mount package, which is suitable for compact designs.
The IPL65R095CFD7AUMA1 meets the AEC-Q101 automotive standard, ensuring enhanced reliability.
The maximum gate-source voltage (Vgs) for this device is 30 V.
The forward voltage (Vf) is rated at 1 V.
The length dimension for the package is 8.1 mm, allowing for compact PCB layouts.
It is used in applications such as server power supplies, telecom equipment, solar inverters, and electric vehicle charging stations.
This model features an N-channel type, which is typical for enhancement mode devices.
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