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Vishay Type N-Channel MOSFET 84.8 A 60 V Depletion Mode 8-Pin PowerPAK SO-8 SiR514DP-T1-RE3
Specifications
| Country of Origin | India |
|---|---|
| Brand | Vishay |
| Model | SiR514DP-T1-RE3 |
| Width | 5.15mm |
| Mount Type | Surface |
| Maximum Operating Temperature | 125°C |
| Package Type | PowerPAK SO-8 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Automotive Standard | AEC-Q101 |
| Channel Type | Type N |
| Maximum Continuous Drain Current Id | 84.8A |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 0.01Ω |
| Channel Mode | Depletion |
| Maximum Power Dissipation Pd | 83W |
| Typical Gate Charge Qg @ Vgs | 56nC |
| Maximum Gate Source Voltage Vgs | 20V |
Key Features
- Features very low drain-source resistance of 0.01 ohms for efficient power handling.
- Typical gate charge of 56 nC at Vgs ensures fast switching performance.
- Maximum power dissipation is 83 watts suitable for high power applications.
- Operating temperature range from -55°C to 125°C supports industrial use.
- Surface mount 8-pin PowerPAK SO-8 package designed for compact assemblies.
- Meets automotive standard AEC-Q101 for automotive and industrial reliability.
- Ideal for power supply, motor drive control, and synchronous rectification applications.
Product Description
Vishay SiR514DP-T1-RE3 is a high-performance Type N-Channel MOSFET designed for power electronics applications. It supports a maximum continuous drain current of 84.8 A and a maximum drain-source voltage of 60 V operating in depletion mode. The device comes in a compact 8-pin PowerPAK SO-8 package optimized for surface mount technology.
This MOSFET features an ultra-low drain-source resistance of 0.01 ohms, which minimizes conduction losses and improves efficiency. It has a typical gate charge (Qg) of 56 nC at Vgs, facilitating rapid switching performance essential for power supply circuits and motor controls. With a maximum power dissipation rating of 83 watts, it is capable of handling significant power within a compact footprint.
The SiR514DP-T1-RE3 operates reliably across a wide temperature range from -55°C to 125°C, making it suitable for demanding industrial and automotive environments. It is compliant with the AEC-Q101 automotive standard, ensuring ruggedness and quality required in automotive applications.
Common applications include power supply regulation, motor drive controls, and synchronous rectification. The surface-mount 8-pin PowerPAK SO-8 package supports efficient heat dissipation and space-saving circuit design.
Very low Rds(on) of 0.01 Ω reduces power losses significantly. Suitable for high-frequency switching with typical gate charge of 56 nC. Supports robust operating conditions with wide temperature range and automotive qualification.
Compact SO-8 PowerPAK package enables dense PCB layouts. Ideal choice for power switching and motor drive applications.
EnvMart offers this Vishay power MOSFET with reliable product condition and complete technical specification for industrial, automotive, and embedded system uses. Explore more in the Semiconductor Power MOSFET category for complementary components and solutions.
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Frequently Asked Questions
The maximum continuous drain current for the Vishay SiR514DP-T1-RE3 is 84.8 A.
This MOSFET supports a maximum drain-source voltage of 60 V.
The typical gate charge at Vgs for this model is 56 nC.
The maximum power dissipation rating for the Vishay SiR514DP-T1-RE3 is 83 watts.
It operates reliably across a temperature range from -55°C to 125°C.
This MOSFET comes in a compact 8-pin PowerPAK SO-8 package.
The Vishay SiR514DP-T1-RE3 meets the AEC-Q101 automotive standard.
The maximum drain-source resistance (Rds(on)) for this MOSFET is 0.01 ohms.
This model features a Type N channel and operates in depletion mode.
Common applications include power supply regulation, motor drive controls, and synchronous rectification.
The width of this MOSFET is 5.15 mm.
The maximum gate-source voltage (Vgs) for the Vishay SiR514DP-T1-RE3 is 20 V.
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