Vishay SiR Type N-Channel MOSFET, 78.4 A, 80 V, 8-Pin PowerPAK SO-8 SiR586DP-T1-RE3

Vishay SiR586DP-T1-RE3 is a high-performance Type N-Channel power MOSFET designed for demanding electronic applications requiring efficient switching and conduction capabilities. It supports a maximum continuous drain current of 78.4 amperes and can withstand up to 80 volts between drain and source terminals. The MOSFET is housed in an 8-pin PowerPAK SO-8 package ideal for surface mount technology, providing a low-profile and thermally efficient solution.

This device features a very low drain-source resistance (Rds) of 0.0058 ohms, which contributes to reduced conduction losses and improved thermal management. The typical gate charge of 19.1 nanocoulombs allows for fast switching speeds in power converters and motor control circuits.

It supports a maximum power dissipation of 71.4 watts and operates reliably across a wide temperature range from -55°C to 150°C, making it suitable for industrial, automotive (non-automotive certified), and commercial electronics. The maximum gate-source voltage of 20 volts ensures robust gate control margin and safe operation of drive circuitry.

With dimensions of 6.15 mm in length and 5.15 mm in width, this compact MOSFET is RoHS compliant, ensuring environmental safety and compatibility with high-volume manufacturing processes.

Typical application areas include synchronous rectification, primary side switches in power supplies, DC/DC converters, and motor drive switches where efficiency and reliability are critical. The product complies with RoHS standards but is not certified for automotive standards.

Key technical specifications include its trench technology construction to optimize the RDS x Qg figure-of-merit, 100% gate resistance and Uni-Junction Isolation System tested for enhanced reliability.

Type N-Channel MOSFET with high continuous drain current of 78.4 amperes. Maximum drain-source voltage of 80 volts for robust operation. PowerPAK SO-8 surface mount package with an 8-pin configuration. Low drain-source resistance of 0.0058 ohms enhances efficiency.

Typical gate charge of 19.1 nanocoulombs at Vgs. Maximum power dissipation rated at 71.4 watts. Operating temperature range from -55°C to 150°C for reliability. Maximum gate-source voltage rating of 20 volts ensures safe gate drive.

Compact physical size with length 6.15 mm and width 5.15 mm. Designed and RoHS compliant for modern electronic applications.

Explore the broad category of MOSFETs and discrete semiconductors on EnvMart for applications in power electronics, industrial controls, laboratory instruments, and advanced electronics manufacturing solutions.