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Toshiba Type N-Channel MOSFET, 6 A, 60 V, 3-Pin Surface Mount SOT-23 SSM3K341R,LF(T

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Toshiba Type N-Channel MOSFET, 6 A, 60 V, 3-Pin Surface Mount SOT-23 SSM3K341R,LF(T

Name: Toshiba Type N-Channel MOSFET, 6 A, 60 V, 3-Pin Surface Mount SOT-23 SSM3K341R,LF(T
Brand: Toshiba
SKU: 113127
Price: 0.49 USD
Availability: InStock

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Category MOSFET Brand Toshiba Condition New

Specifications

Country of Origin	India
Brand	Toshiba
Height	0.8mm
Length	2.4mm
Model	SSM3K341R,LF(T
Width	2.9mm
Mount Type	Surface
Maximum Operating Temperature	175°C
Package Type	SOT-23
Minimum Operating Temperature	-55°C
Pin Count	3
Channel Type	Type N
Maximum Continuous Drain Current Id	6A
Maximum Drain Source Voltage Vds	60V
Maximum Drain Source Resistance Rds	43mΩ
Maximum Power Dissipation Pd	2.4W
Typical Gate Charge Qg @ Vgs	9.3nC
Maximum Gate Source Voltage Vgs	20V
Forward Voltage Vf	-0.9V

Key Features

Maximum continuous drain current is 6 A ensuring high current capability.
Maximum drain-source voltage rated at 60 V for moderate voltage operations.
Low drain-source resistance of 43 milliohms typical to minimize conduction losses.
Typical gate charge of 9.3 nanocoulombs for fast switching performance.
Maximum power dissipation is 2.4 W allowing compact thermal design.
Wide operating temperature range from -55°C to 175°C for robust application conditions.
Maximum gate-source voltage threshold is ±20 V enhancing reliability.
Compact dimensions of 2.4 mm length, 2.9 mm width, and 0.8 mm height fit space-constrained PCBs.

Product Description

Toshiba SSM3K341R,LF(T Type N-Channel MOSFET is a high-performance discrete semiconductor device engineered to support power management and switching applications in electronic circuits. Featuring a 3-pin SOT-23 surface mount package, this MOSFET is optimized for low conduction losses and fast switching times, making it ideal for integration into compact electronic devices and systems.

With a maximum continuous drain current of 6 A and a maximum drain-source voltage of 60 V, it reliably handles moderate power levels in both industrial and consumer electronics. The device’s low drain-source resistance of 43 milliohms reduces heat generation and boosts efficiency.

It features a typical gate charge of 9.3 nanocoulombs at specified gate-source voltage, ensuring fast response times needed in switching applications. Power dissipation is rated at 2.4 watts, allowing careful thermal design in crowded PCB layouts.

The operating temperature range from -55°C to 175°C ensures reliable performance even in harsh environmental conditions. The maximum gate-source voltage of ±20 V further ensures device durability and robustness against voltage spikes.

Its compact physical dimensions, 2.4 mm long by 2.9 mm wide by 0.8 mm high, enable usage in space-sensitive electronics where size and weight constraints are critical.

This Toshiba MOSFET manufactured from silicon material technology is widely applied in power management switching, automotive electronics, instrumentation, and various industrial control systems.

Maximum continuous drain current: 6 A. Drain-source voltage: 60 V. Package Type: SOT-23 surface mount. Pin count: 3 pins. Drain-source resistance: 43 mΩ typical. Gate charge: 9.3 nC typical. Power dissipation: 2.4 W maximum.

Operating temp range: -55°C to 175°C. Gate-source voltage max: ±20 V. Compact dimensions: 2.4 x 2.9 x 0.8 mm.

This discrete MOSFET is suitable for industrial, automotive, laboratory, and commercial electronics requiring efficient power switching. Explore more semiconductor devices and MOSFETs at EnvMart.