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Toshiba SSM3 Series N-Channel MOSFET, 500 mA Continuous Drain Current, 20 V Drain Source Voltage SSM3K36FS(TE85L,F)

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Toshiba SSM3 Series N-Channel MOSFET, 500 mA Continuous Drain Current, 20 V Drain Source Voltage SSM3K36FS(TE85L,F)

Name: Toshiba SSM3 Series N-Channel MOSFET, 500 mA Continuous Drain Current, 20 V Drain Source Voltage SSM3K36FS(TE85L,F)
Brand: Toshiba
SKU: 102004
Price: 0.33 USD
Availability: InStock

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Category MOSFET Brand Toshiba Condition New

Specifications

Country of Origin	Japan
Brand	Toshiba
Height	0.7mm
Length	1.6mm
Model	SSM3K36FS(TE85L,F)
Width	0.8mm
Mount Type	Surface
Series	SSM3
Maximum Operating Temperature	150°C
Package Type	SSM
Minimum Operating Temperature	-55°C
Pin Count	3
Channel Type	Type N
Maximum Continuous Drain Current Id	500mA
Maximum Drain Source Voltage Vds	20V
Maximum Drain Source Resistance Rds	1.52Ω
Channel Mode	Enhancement
Maximum Power Dissipation Pd	150mW
Typical Gate Charge Qg @ Vgs	1.23nC
Maximum Gate Source Voltage Vgs	10V
Forward Voltage Vf	-0.88V

Key Features

The device offers low maximum drain-source resistance of 1.52 ohms for efficient conduction.
It supports a typical gate charge of 1.23 nanocoulombs at the specified gate voltage.
Operates across a wide temperature range from -55°C minimum to 150°C maximum for reliable performance.
Designed for surface mount with a compact size of 1.6 mm length, 0.8 mm width, and 0.7 mm height.
Maximum power dissipation is rated at 150 milliwatts ensuring device safety under normal operation.
Gate-source voltage maximum is 10 V with stable performance.
Forward voltage is measured at -0.88 V ensuring predictable behavior in circuits.
Package is of SSM type adhering to SSM3 series standards with 3-pin configuration.

Product Description

Toshiba SSM3K36FS(TE85L,F) is a high-quality N-Channel MOSFET designed for electronic and power semiconductor applications, offering a maximum continuous drain current of up to 500 mA and a drain-source voltage rating of 20 V. It utilizes enhancement mode channel operation and is housed in a compact 3-pin SSM surface mount package, making it suitable for dense PCB layouts in modern electronics.

This MOSFET features a low maximum drain-source resistance of 1.52 ohms which facilitates efficient conduction and reduced power losses. The device has a typical gate charge of 1.23 nC at the specified gate voltage which contributes to fast switching performance important for high-frequency applications.

Designed to operate reliably in harsh environments, the device withstands temperatures as low as -55°C and as high as 150°C. It dissipates up to 150 mW of power, ensuring thermal stability for enhanced operational lifespan.

The gate-source voltage rating up to 10 V and a forward voltage of -0.88 V provide precise control in switching circuits. The standardized SSM3 series packaging with 3-pin surface mount configuration supports ease of assembly in automated production lines.

Maximum continuous drain current of 500 mA. Maximum drain-source voltage rating of 20 V. Low maximum drain-source resistance of 1.52 Ω. Compact SSM 3-pin surface mount package. Wide operating temperature range from -55°C to 150°C.

Maximum power dissipation of 150 mW. Typical gate charge of 1.23 nC at Vgs. Maximum gate-source voltage of 10 V.

This product is manufactured in Japan and is suitable for industrial, electronic component assemblies, and embedded power management applications. It supports use in semiconductors for various consumer and industrial electronic devices, PCB integration, and prototyping uses.

Explore more semiconductor products including MOSFETs at EnvMart and upgrade your electronics with trusted Toshiba components providing dependable performance in precision circuits.