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| Country of Origin | India |
|---|---|
| Brand | Toshiba |
| Height | 0.8mm |
| Length | 2.4mm |
| Model | SSM3J328R,LF(T |
| Width | 2.9mm |
| Mount Type | Surface |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-23 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 6A |
| Maximum Drain Source Voltage Vds | 20V |
| Maximum Drain Source Resistance Rds | 88.4mΩ |
| Maximum Power Dissipation Pd | 2W |
| Typical Gate Charge Qg @ Vgs | 12.8nC |
| Maximum Gate Source Voltage Vgs | 8V |
| Forward Voltage Vf | 0.87V |
Toshiba SSM3J328R,LF(T is a P-Channel MOSFET component optimized for power management and switching applications requiring efficient control at low voltages. It features a surface mount 3-pin SOT-23 package with a small footprint suitable for compact PCB layouts. This device supports a maximum continuous drain current of 6 amperes and drainsource voltage rating of 20 volts, making it ideal for low voltage power switching circuits.
The MOSFET exhibits a low drain-source resistance (Rds(on)) of 88.4 mΩ, which reduces conduction losses and improves efficiency. Its maximum power dissipation of 2 watts allows sustained operation under moderate loads, while the typical gate charge of 12.8 nC at Vgs ensures minimal switching losses.
Thermally rated for operating temperatures from -55°C to 150°C, the device is suitable for industrial and commercial electronic systems requiring durable operation under variable temperature conditions. The maximum gate-source voltage rating of ±8 volts permits reliable gate drive without damage. Its physical dimensions - length 2.4 mm, width 2.9 mm, and height 0.8 mm - allow integration into dense circuitry.
This MOSFET uses silicon semiconductor technology and is surface mounted for efficient automated assembly. While not automotive certified, it is suitable for a wide range of general electronic applications including power management, switching regulators, and signal amplification.
Compact 3-pin SOT-23 surface mount package for space saving PCB design. Supports 6 A drain current and 20 V drain-source voltage for robust power switching. Low Rds(on) of 88.4 mΩ reduces conduction losses. Wide operating temperatures from -55°C to 150°C ensure reliable performance.
Maximum power dissipation of 2 W suitable for moderate power applications. Typical gate charge of 12.8 nC supports efficient switching operations. Forward voltage of 0.87 V suitable for low voltage drop. Silicon semiconductor technology ensures stable electrical characteristics.
Surface mount type for modern electronics manufacturing processes. Designed for industrial, consumer electronics, and general-purpose electronic power management. Explore a wide range of semiconductor components and Power MOSFETs on EnvMart for your advanced industrial and electronic design needs.
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