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Toshiba P-Channel MOSFET, 6 A Continuous Drain Current, 20 V Drain Source Voltage, 3-Pin SOT-23 SMD Package SSM3J328R,LF(T

Category Power MOSFET Brand Toshiba Condition New

Specifications

Country of Origin India
Brand Toshiba
Height 0.8mm
Length 2.4mm
Model SSM3J328R,LF(T
Width 2.9mm
Mount Type Surface
Maximum Operating Temperature 150°C
Package Type SOT-23
Minimum Operating Temperature -55°C
Pin Count 3
Channel Type Type P
Maximum Continuous Drain Current Id 6A
Maximum Drain Source Voltage Vds 20V
Maximum Drain Source Resistance Rds 88.4mΩ
Maximum Power Dissipation Pd 2W
Typical Gate Charge Qg @ Vgs 12.8nC
Maximum Gate Source Voltage Vgs 8V
Forward Voltage Vf 0.87V

Key Features

  • Equipped with a compact 3-pin SOT-23 surface mount package.
  • Maximum continuous drain current of 6 amperes enhances power handling capabilities.
  • Maximum drain-source voltage of 20 volts suitable for low-voltage power switching.
  • Maximum drain-source resistance Rds(on) of 88.4 milliohms ensures low conductive losses.
  • Operational temperature range from -55°C to 150°C for reliability in harsh environments.
  • Maximum gate-source voltage of ±8 volts allows stable gate control.
  • Forward voltage of 0.87 volts and typical gate charge of 12.8 nC at Vgs support efficient switching.
  • Compact dimensions of 2.4 mm length, 2.9 mm width, and height of 0.8 mm.

Product Description

Toshiba SSM3J328R,LF(T is a P-Channel MOSFET component optimized for power management and switching applications requiring efficient control at low voltages. It features a surface mount 3-pin SOT-23 package with a small footprint suitable for compact PCB layouts. This device supports a maximum continuous drain current of 6 amperes and drainsource voltage rating of 20 volts, making it ideal for low voltage power switching circuits.

The MOSFET exhibits a low drain-source resistance (Rds(on)) of 88.4 mΩ, which reduces conduction losses and improves efficiency. Its maximum power dissipation of 2 watts allows sustained operation under moderate loads, while the typical gate charge of 12.8 nC at Vgs ensures minimal switching losses.

Thermally rated for operating temperatures from -55°C to 150°C, the device is suitable for industrial and commercial electronic systems requiring durable operation under variable temperature conditions. The maximum gate-source voltage rating of ±8 volts permits reliable gate drive without damage. Its physical dimensions - length 2.4 mm, width 2.9 mm, and height 0.8 mm - allow integration into dense circuitry.

This MOSFET uses silicon semiconductor technology and is surface mounted for efficient automated assembly. While not automotive certified, it is suitable for a wide range of general electronic applications including power management, switching regulators, and signal amplification.

Compact 3-pin SOT-23 surface mount package for space saving PCB design. Supports 6 A drain current and 20 V drain-source voltage for robust power switching. Low Rds(on) of 88.4 mΩ reduces conduction losses. Wide operating temperatures from -55°C to 150°C ensure reliable performance.

Maximum power dissipation of 2 W suitable for moderate power applications. Typical gate charge of 12.8 nC supports efficient switching operations. Forward voltage of 0.87 V suitable for low voltage drop. Silicon semiconductor technology ensures stable electrical characteristics.

Surface mount type for modern electronics manufacturing processes. Designed for industrial, consumer electronics, and general-purpose electronic power management. Explore a wide range of semiconductor components and Power MOSFETs on EnvMart for your advanced industrial and electronic design needs.

Toshiba P-Channel MOSFET, 6 A Continuous Drain Current, 20 V Drain Source Voltage, 3-Pin SOT-23 SMD Package SSM3J328R,LF(T
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Frequently Asked Questions

The maximum continuous drain current for this model is 6 amperes.

It has a maximum drain-source voltage rating of 20 volts.

The maximum drain-source resistance (Rds(on)) is 88.4 milliohms, which helps reduce conduction losses.

The operational temperature range is from -55°C to 150°C, making it suitable for harsh environments.

The dimensions of the SOT-23 package are 2.4 mm in length, 2.9 mm in width, and 0.8 mm in height.

The typical gate charge at Vgs is 12.8 nC, which supports efficient switching operations.

The maximum gate-source voltage for this MOSFET is ±8 volts.

The forward voltage is 0.87 volts, suitable for low voltage drop applications.

The maximum power dissipation for this model is 2 watts, allowing operation under moderate loads.

This component features a 3-pin configuration.

It uses a surface mount type, specifically designed for compact PCB layouts.

It is suitable for power management, switching regulators, and general-purpose electronic applications.

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