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Infineon IPT Type N-Channel MOSFET, 454 A Continuous Drain Current, 60 V Maximum Drain Source Voltage IPT008N06NM5LFATMA1

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Infineon IPT Type N-Channel MOSFET, 454 A Continuous Drain Current, 60 V Maximum Drain Source Voltage IPT008N06NM5LFATMA1

Name: Infineon IPT Type N-Channel MOSFET, 454 A Continuous Drain Current, 60 V Maximum Drain Source Voltage IPT008N06NM5LFATMA1
Brand: Infineon
SKU: 113045
Price: 4.92 USD
Availability: InStock

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Category MOSFET Brand Infineon Condition New

Specifications

Country of Origin	India
Brand	Infineon
Height	2.4mm
Length	10.1mm
Model	IPT008N06NM5LFATMA1
Width	10.58mm
Mount Type	Surface
Series	IPT
Maximum Operating Temperature	150°C
Package Type	HSOF-8
Minimum Operating Temperature	-55°C
Pin Count	8
Channel Type	Type N
Maximum Continuous Drain Current Id	454A
Maximum Drain Source Voltage Vds	60V
Maximum Drain Source Resistance Rds	0.8mΩ
Maximum Power Dissipation Pd	278W
Typical Gate Charge Qg @ Vgs	185nC
Maximum Gate Source Voltage Vgs	20V
Forward Voltage Vf	1V

Key Features

High current capability with 454 A continuous drain current for demanding power applications.
60 V maximum drain source voltage suitable for high-voltage switching.
Low RDS(on) of 0.8 milliohms reducing conduction losses in power circuits.
Maximum power dissipation of 278 W enables sustained high-power operation.
Typical gate charge of 185 nC ensures predictable switching characteristics.
Wide operating temperature range from -55°C to 150°C for harsh environments.
Surface-mount HSOF-8 package for compact PCB footprint and improved thermal management.
Gate-source voltage rating of ±20 V allowing broad gate drive margins.

Product Description

Infineon IPT008N06NM5LFATMA1 is a high-performance Type N-Channel MOSFET designed for power switching applications requiring substantial current handling and robust thermal endurance. It supports a maximum continuous drain current of 454 A and a maximum drain-source voltage of 60 V, housed in an 8-Pin HSOF-8 surface-mount package which facilitates compact PCB layouts.

This MOSFET features a low maximum drain-source resistance of 0.8 milliohms, significantly reducing conduction losses and improving overall circuit efficiency. It offers a maximum power dissipation rating of 278 W, enabling it to sustain high-power operation under demanding conditions and ambient temperatures ranging from -55°C to 150°C, making it suitable for industrial, automotive, and server power supply applications.

The device has a typical gate charge of 185 nC at gate-source voltage, permitting precise and efficient switching control. The gate-source voltage rating of ±20 V allows flexible gate drive design. Its forward voltage of 1 V ensures minimal power loss during operation.

Infineon IPT series MOSFETs are ideal for high-current motor drive stages, DC-DC converter output switches, and power distribution in server power supplies. Their robust design suits industrial inverter switching stages and battery management modules handling large currents.

Typical use cases involve applications demanding low conduction losses, efficient thermal management, and compact packaging in power electronics circuits. Proper PCB design with adequate thermal vias and copper area is recommended to maintain junction temperatures within device limits during high load.

High continuous drain current capability of 454 A. Maximum drain source voltage of 60 V for high voltage applications. Low on-state resistance of 0.8 mΩ reduces power losses. Thermally robust up to 150°C operating temperature.

Compact 8-pin HSOF package for space-saving layouts. Typical gate charge of 185 nC for efficient switching control. Wide operating temperature range from -55°C to 150°C. Compatible with motor drives, DC-DC converters, inverters, and battery management.

Designed for surface mount with enhanced thermal paths. Explore the range of Infineon MOSFETs at EnvMart for reliable power management solutions in industrial and commercial electronic systems.

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Frequently Asked Questions

The Infineon IPT008N06NM5LFATMA1 has a maximum continuous drain current of 454 A.

This model supports a maximum drain-source voltage of 60 V.

It features a low maximum drain-source resistance of 0.8 milliohms, which helps reduce conduction losses.

The maximum power dissipation for this unit is 278 W, allowing for sustained high-power operation.

The typical gate charge at gate-source voltage is 185 nC, ensuring predictable switching characteristics.

It operates within a wide temperature range from -55°C to 150°C, making it suitable for harsh environments.

The device is housed in an 8-Pin HSOF-8 surface-mount package, which facilitates compact PCB layouts.

The gate-source voltage rating for this model is ±20 V, allowing for broad gate drive margins.

The dimensions are 10.1 mm in length, 10.58 mm in width, and 2.4 mm in height.

It is suitable for applications such as high-current motor drive stages, DC-DC converter output switches, and power distribution in server power supplies.

The forward voltage is specified at 1 V, which helps minimize power loss during operation.

This unit has a pin count of 8, suitable for surface mounting.