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Infineon IPP Type P-Channel MOSFET, 62 A, 100 V Enhancement Mode, 3-Pin TO-220 Package IPP330P10NMAKSA1

Category MOSFET Brand Infineon Condition New

Specifications

Country of Origin India
Brand Infineon
Height 4.57mm
Length 10.36mm
Model IPP330P10NMAKSA1
Width 15.95mm
Mount Type Surface
Series IPP
Maximum Operating Temperature 175°C
Package Type TO-220
Minimum Operating Temperature -55°C
Pin Count 3
Channel Type Type P
Maximum Continuous Drain Current Id 62A
Maximum Drain Source Voltage Vds 100V
Maximum Drain Source Resistance Rds 33mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 300W
Typical Gate Charge Qg @ Vgs -189nC
Maximum Gate Source Voltage Vgs 20V
Forward Voltage Vf -1.2V

Key Features

  • High continuous drain current capacity of 62 amperes.
  • Operates at a maximum drain-source voltage of 100 volts.
  • Robust TO-220 surface mount package with 3 pins for easy integration.
  • Low typical gate charge of -189nC, enhancing switching efficiency.
  • Maximum power dissipation rating of 300 watts for demanding applications.
  • Wide operating temperature range from -55°C to 175°C.
  • Designed for battery management, load switching, and reverse polarity protection.
  • Improved system efficiency with low on-resistance (33 milliohms).

Product Description

Infineon IPP330P10NMAKSA1 is a P-Channel MOSFET with a maximum continuous drain current of 62 amperes and a maximum drain-source voltage rating of 100 volts. The device employs enhancement mode operation and comes packaged in a standard TO-220 surface mount package with 3 pins, facilitating easy mounting on printed circuit boards.

This MOSFET features low gate charge of -189 nanocoulombs, which supports fast switching and reduces power losses during operation, making it well-suited for medium and low power applications such as battery management, load switching, and reverse polarity protection. Its maximum power dissipation of 300 watts allows it to handle demanding load conditions efficiently.

The device operates reliably over a wide temperature range from -55°C to 175°C and offers a low drain-source resistance (Rds(on)) of 33 milliohms, enhancing the overall efficiency of electronic circuits. The rugged and reliable design ensures avalanche ruggedness, which provides protection against transient voltage spikes and improves device longevity.

Typical applications include industrial automation systems, battery-powered equipment, and automotive electronics where durability and performance are paramount. The standard TO-220 package and industry-standard footprint facilitate straightforward system integration in a variety of electronics and electrical devices.

High continuous drain current capacity of 62 amperes. Operates at a maximum drain-source voltage of 100 volts. Robust TO-220 surface mount package with 3 pins for easy integration. Low typical gate charge of -189nC, enhancing switching efficiency.

Maximum power dissipation rating of 300 watts for demanding applications. Wide operating temperature range from -55°C to 175°C. Designed for battery management, load switching, and reverse polarity protection. Improved system efficiency with low on-resistance (33 milliohms).

Reliable and rugged construction suitable for industrial automation.

This product is ideal for use in industrial, electronic, and power management applications requiring high reliability and efficient switching performance. EnvMart provides this Infineon MOSFET as part of its Electronics & Electricals inventory, supporting engineers and technicians with premium semiconductor devices.

Explore more Infineon semiconductor products and gain access to high-quality MOSFETs suitable for advanced electronic designs at EnvMart.

Infineon IPP Type P-Channel MOSFET, 62 A, 100 V Enhancement Mode, 3-Pin TO-220 Package IPP330P10NMAKSA1
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Frequently Asked Questions

The maximum continuous drain current for this model is 62 amperes.

It operates at a maximum drain-source voltage of 100 volts.

The maximum power dissipation rating is 300 watts, suitable for demanding applications.

The dimensions of the TO-220 package are 10.36mm in length, 15.95mm in width, and 4.57mm in height.

The typical gate charge is -189 nanocoulombs, which enhances switching efficiency.

It operates reliably over a wide temperature range from -55°C to 175°C.

It is designed for applications such as battery management, load switching, and reverse polarity protection.

The on-resistance (Rds(on)) is 33 milliohms, which improves system efficiency.

The TO-220 package has 3 pins for easy integration.

The channel mode is enhancement, which is typical for this type of MOSFET.

The maximum gate-source voltage is 20 volts.

The country of origin for this product is India.

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