DiodesZetex Type N-Channel MOSFET 30 V, 1.4 A, Enhancement Mode, 3-Pin SOT-23 ZXM61N03FTA

DiodesZetex ZXM61N03FTA is a Type N-Channel enhancement mode MOSFET designed for efficient switching and low power dissipation. This device supports a maximum continuous drain current of 1.4 A and a drain-source voltage of 30 V, making it ideal for medium power applications.

Encapsulated in a compact 3-pin SOT-23 surface mount package, it offers excellent board space optimization. The MOSFET provides a low maximum drain-source resistance of 300 mΩ which optimizes conduction efficiency and reduces heat generation.

With a typical gate charge of 4.1 nC and a maximum gate-source voltage of 20 V, the device enables fast switching and gate reliability in electronic circuits. Its operational temperature range from -55°C to 150°C supports robust usage in industrial, automotive, and consumer electronics applications.

This MOSFET complies with the automotive standard AEC-Q101, ensuring suitability for automotive and other stringent environments. Its minimized forward voltage drop of 0.95 V reduces power losses during conduction.

Physical dimensions of length 3.05 mm, width 1.4 mm, and height 1 mm allow integration into tight system footprints. Typical applications include power management, load switching, and buffer stages in electronic control systems.

This MOSFET operates in enhancement mode suitable for switching applications. The device features a maximum power dissipation of 806 mW allowing moderate power handling. It provides low maximum drain-source resistance of 300 mΩ for efficient conduction.

Operating temperature range spans from -55°C to 150°C ensuring robust performance. The 3-pin SOT-23 surface mount package supports compact PCB layouts. Typical gate charge is low at 4.1 nC for fast switching responses. Maximum gate-source voltage rating of 20 V protects against gate overstress.

Automotive grade standard AEC-Q101 certification ensures reliability in demanding environments. Dimensions are compact: length 3.05 mm, width 1.4 mm, height 1 mm for space constrained designs. Forward voltage drop is low at 0.95 V to reduce conduction losses.

This MOSFET is widely used in industrial, automotive, telecommunications, and consumer electronics for efficient power switching, voltage regulation, and signal control applications. It supports high efficiency and reliability in compact electronics designs.

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