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Infineon 600V CoolMOS CE Type N-Channel MOSFET 3.7A 600V 3-Pin IPAK IPU60R2K1CEAKMA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 6.22mm |
| Length | 6.73mm |
| Model | IPU60R2K1CEAKMA1 |
| Width | 2.41mm |
| Mount Type | Through Hole |
| Series | 600V CoolMOS CE |
| Maximum Operating Temperature | 150°C |
| Package Type | IPAK |
| Minimum Operating Temperature | -40°C |
| Pin Count | 3 |
| Channel Type | Type N |
| Maximum Continuous Drain Current Id | 3.7A |
| Maximum Drain Source Voltage Vds | 600V |
| Maximum Drain Source Resistance Rds | 2.1Ω |
| Maximum Power Dissipation Pd | 22W |
| Typical Gate Charge Qg @ Vgs | 6.7nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 0.9V |
Key Features
- Maximum continuous drain current of 3.7 amperes.
- Maximum drain-source voltage rated at 600 volts.
- Through hole mount type with IPAK package.
- Maximum power dissipation of 22 watts for reliable operation.
- Wide operating temperature range from -40°C to 150°C.
- Typical gate charge of 6.7 nanocoulombs at Vgs.
- Low maximum drain-source resistance of 2.1 ohms for efficient conduction.
- Maximum gate-source voltage rating of 20 volts.
Product Description
Infineon IPU60R2K1CEAKMA1 is a 600V CoolMOS CE series type N-channel power MOSFET designed to provide fast switching performance with excellent cost-to-performance ratio. It features a maximum continuous drain current of 3.7 A and a maximum drain-source voltage of 600 V in a 3-pin IPAK through-hole package. The device offers robust electrical characteristics suitable for use in power factor correction (PFC) stages, hard switching pulse width modulation (PWM) stages, and resonant switching stages in various industrial and electronic applications.
This MOSFET ensures very high commutation ruggedness, making it durable in demanding switching environments. It is easy to drive and use, supporting efficient power management. The device is fabricated with Pb-free plating and halogen-free mold compound, ensuring environmental compliance and safety.
The IPU60R2K1CEAKMA1 has a maximum power dissipation of 22W and operates reliably in temperatures ranging from -40°C to 150°C. Typical gate charge at voltage Vgs is 6.7nC, and it has a maximum gate-source voltage of 20V. Its low maximum drain-source resistance of 2.1Ω reduces conduction losses and improves energy efficiency.
Compactly sized with length 6.73 mm, width 2.41 mm, and height 6.22 mm, this MOSFET is suitable for through-hole mounting on a variety of PCBs in industrial, electronic, and power supply applications, including manufacturing, laboratory equipment, and commercial electronics.
Maximum continuous drain current of 3.7 amperes. Maximum drain-source voltage rated at 600 volts. Through hole mount type with IPAK package. Maximum power dissipation of 22 watts for reliable operation. Wide operating temperature range from -40°C to 150°C.
Typical gate charge of 6.7 nanocoulombs at Vgs. Low maximum drain-source resistance of 2.1 ohms for efficient conduction. Maximum gate-source voltage rating of 20 volts. Compact dimensions: Length 6.73mm, Width 2.41mm, Height 6.22mm.
Lead-free plating and halogen-free mold compound for environmental safety.
Explore the full Infineon MOSFET range and other semiconductor products on EnvMart for reliable and high-quality components tailored to your industrial and electronic design needs.
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Frequently Asked Questions
The maximum continuous drain current of the Infineon IPU60R2K1CEAKMA1 is 3.7 amperes.
This model has a maximum drain-source voltage rating of 600 volts.
It features a through-hole mount type with an IPAK package.
The maximum power dissipation for the IPU60R2K1CEAKMA1 is 22 watts.
It operates reliably in a wide temperature range from -40°C to 150°C.
The typical gate charge at voltage Vgs is 6.7 nanocoulombs.
The maximum gate-source voltage rating for this model is 20 volts.
The dimensions are 6.73 mm in length, 2.41 mm in width, and 6.22 mm in height.
It has a low maximum drain-source resistance of 2.1 ohms.
This model features a Type N channel.
The forward voltage of the Infineon IPU60R2K1CEAKMA1 is 0.9 volts.
The country of origin for this MOSFET is India.
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