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Infineon IPN Series Type N-Channel MOSFET, 10 A, 700 V, Enhancement Mode, 3-Pin SOT-223 IPN70R450P7SATMA1
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| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 1.8mm |
| Length | 6.7mm |
| Model | IPN70R450P7SATMA1 |
| Width | 3.7mm |
| Mount Type | Surface |
| Series | IPN |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-223 |
| Minimum Operating Temperature | -40°C |
| Pin Count | 3 |
| Channel Type | Type N |
| Maximum Continuous Drain Current Id | 10A |
| Maximum Drain Source Voltage Vds | 700V |
| Maximum Drain Source Resistance Rds | 450mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 6.2W |
| Typical Gate Charge Qg @ Vgs | 13.1nC |
| Maximum Gate Source Voltage Vgs | 30V |
| Forward Voltage Vf | 0.9V |
Infineon IPN70R450P7SATMA1 is a high-performance Type N-Channel MOSFET optimized for power electronic applications requiring efficient switching and thermal management. With a continuous drain current rating of 10 amps and a maximum drain-source voltage rating of 700 volts, this device excels in enhancement mode operation, making it suitable for power supplies, motor drives, and industrial control circuits.
Encapsulated in a 3-pin SOT-223 package, it offers an affordable, footprint-compatible alternative to larger DPAK packages without compromising thermal dissipation, allowing reduced PCB real estate usage and enhancing design flexibility. The device includes an integrated ESD protection diode to improve circuit robustness against electrostatic discharge events.
The MOSFET achieves extremely low conduction and switching losses owing to its low Figure of Merit parameters, maximizing efficiency in power conversion tasks. With typical gate charge of 13.1 nC at gate-source voltage and a maximum drain-source resistance of 450 milliohms, the component ensures rapid switching and minimal power dissipation.
Engineered to withstand operating temperatures from -40°C to 150°C, it fits well in industrial, commercial, and automotive power electronics environments needing robust thermal performance. The compact dimensions (6.7 mm length × 3.7 mm width × 1.8 mm height) facilitate easy integration on printed circuit boards supporting surface mount technology, enabling compact and efficient system designs.
The MOSFET provides extremely low losses due to very low Figure of Merit (FOM). Excellent thermal behavior supports high reliability in demanding applications. Integrated electrostatic discharge (ESD) protection diode improves device durability.
Low switching losses increase overall power efficiency. Validation compliant with JEDEC standards ensures quality and reliability. Compact 3-pin SOT-223 package reduces PCB footprint relative to DPAK package. Suitable for power management in industrial electronics, manufacturing equipment, and commercial products.
Surface mount package type facilitates automated assembly processes. Max power dissipation of 6.2 W supports moderate power applications.
Infineon’s IPN series MOSFETs are widely used in electronic component manufacturing, semiconductor power supply designs, and other high-efficiency electronic systems. This product is offered as new and originates from reliable manufacturing ensuring compliance with industry standards.
Explore the extensive range of MOSFETs on EnvMart for advanced semiconductor solutions.
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Infineon IPN Series Type N-Channel MOSFET, 10 A, 700 V, Enhancement Mode, 3-Pin SOT-223 IPN70R450P7SATMA1
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Infineon IPN Series Type N-Channel MOSFET, 10 A, 700 V, Enhancement Mode, 3-Pin SOT-223 IPN70R450P7SATMA1
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