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Infineon IPN Series Type N-Channel MOSFET, 10 A, 700 V, Enhancement Mode, 3-Pin SOT-223 IPN70R450P7SATMA1

Category MOSFET Brand Infineon Condition New

Specifications

Country of Origin India
Brand Infineon
Height 1.8mm
Length 6.7mm
Model IPN70R450P7SATMA1
Width 3.7mm
Mount Type Surface
Series IPN
Maximum Operating Temperature 150°C
Package Type SOT-223
Minimum Operating Temperature -40°C
Pin Count 3
Channel Type Type N
Maximum Continuous Drain Current Id 10A
Maximum Drain Source Voltage Vds 700V
Maximum Drain Source Resistance Rds 450mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 6.2W
Typical Gate Charge Qg @ Vgs 13.1nC
Maximum Gate Source Voltage Vgs 30V
Forward Voltage Vf 0.9V

Key Features

  • The device offers extremely low losses due to very low Figure of Merit (FOM).
  • It features excellent thermal behavior suitable for high-performance applications.
  • Integrated ESD protection diode enhances device reliability.
  • Designed for low switching losses enhancing efficiency in power circuits.
  • The MOSFET's typical gate charge (Qg) at Vgs is 13.1nC.
  • Maximum drain-source resistance (Rds) is 450mΩ ensuring low conduction losses.
  • It supports a maximum power dissipation of 6.2 watts.
  • Operational temperature range spans from -40°C to 150°C.

Product Description

Infineon IPN70R450P7SATMA1 is a high-performance Type N-Channel MOSFET optimized for power electronic applications requiring efficient switching and thermal management. With a continuous drain current rating of 10 amps and a maximum drain-source voltage rating of 700 volts, this device excels in enhancement mode operation, making it suitable for power supplies, motor drives, and industrial control circuits.

Encapsulated in a 3-pin SOT-223 package, it offers an affordable, footprint-compatible alternative to larger DPAK packages without compromising thermal dissipation, allowing reduced PCB real estate usage and enhancing design flexibility. The device includes an integrated ESD protection diode to improve circuit robustness against electrostatic discharge events.

The MOSFET achieves extremely low conduction and switching losses owing to its low Figure of Merit parameters, maximizing efficiency in power conversion tasks. With typical gate charge of 13.1 nC at gate-source voltage and a maximum drain-source resistance of 450 milliohms, the component ensures rapid switching and minimal power dissipation.

Engineered to withstand operating temperatures from -40°C to 150°C, it fits well in industrial, commercial, and automotive power electronics environments needing robust thermal performance. The compact dimensions (6.7 mm length × 3.7 mm width × 1.8 mm height) facilitate easy integration on printed circuit boards supporting surface mount technology, enabling compact and efficient system designs.

The MOSFET provides extremely low losses due to very low Figure of Merit (FOM). Excellent thermal behavior supports high reliability in demanding applications. Integrated electrostatic discharge (ESD) protection diode improves device durability.

Low switching losses increase overall power efficiency. Validation compliant with JEDEC standards ensures quality and reliability. Compact 3-pin SOT-223 package reduces PCB footprint relative to DPAK package. Suitable for power management in industrial electronics, manufacturing equipment, and commercial products.

Surface mount package type facilitates automated assembly processes. Max power dissipation of 6.2 W supports moderate power applications.

Infineon’s IPN series MOSFETs are widely used in electronic component manufacturing, semiconductor power supply designs, and other high-efficiency electronic systems. This product is offered as new and originates from reliable manufacturing ensuring compliance with industry standards.

Explore the extensive range of MOSFETs on EnvMart for advanced semiconductor solutions.

Infineon IPN Series Type N-Channel MOSFET, 10 A, 700 V, Enhancement Mode, 3-Pin SOT-223 IPN70R450P7SATMA1
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Frequently Asked Questions

The maximum continuous drain current for this model is 10 A.

This MOSFET has a maximum drain-source voltage rating of 700 V.

The typical gate charge (Qg) at gate-source voltage for this device is 13.1 nC.

The maximum power dissipation for this model is 6.2 W.

The dimensions of this unit are 6.7 mm in length, 3.7 mm in width, and 1.8 mm in height.

The maximum drain-source resistance (Rds) for this MOSFET is 450 mΩ.

It operates within a temperature range of -40°C to 150°C.

This model is encapsulated in a 3-pin SOT-223 package.

Yes, it includes an integrated ESD protection diode to enhance device reliability.

This device is a Type N-Channel MOSFET.

The mount type for this MOSFET is surface mount.

It is suitable for power supplies, motor drives, and industrial control circuits.

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