Infineon HEXFET Type N-Channel MOSFET, 89 A Continuous Drain Current, 55 V Drain Source Voltage, 3-Pin IRL3705NSTRLPBF

Infineon IRL3705NSTRLPBF HEXFET Type N-Channel MOSFET is a high-performance discrete semiconductor device designed for industrial and electronic applications requiring efficient power switching. Rated for a maximum continuous drain current of 89 amperes and a maximum drain source voltage of 55 volts, this MOSFET comes in a robust 3-pin TO-263 surface mount package which aids in effective thermal management and compact circuit layouts.

The device features a planar cell structure which broadens the safe operating area (SOA), enhancing its durability and reliability in power electronic circuits. Its low drain source resistance of just 10 milliohms reduces conduction losses, contributing to overall energy efficiency in switching power supplies, motor drives, and DC-DC converters.

The gate charge is optimized to 98 nanocoulombs at 8 V, enabling minimal switching power loss and faster switching speeds. Handling a power dissipation up to 170 watts, it suits demanding thermal environments, supported by its operating temperature range from -55 °C to 175 °C.

This MOSFET complies with JEDEC qualification standards, guaranteeing quality and consistent operation in critical applications. Its surface mount TO-263 package supports automated PCB assembly, enhancing manufacturability in industrial, automotive, and power electronics sectors.

Typical use cases include power management modules, inverters, switching regulators, and other semiconductor power control circuits requiring reliable N-channel MOSFETs with high current capacity and moderate voltage levels.

This MOSFET is designed with a planar cell structure optimized for wide safe operating area (SOA). It delivers low drain source resistance of 10 milliohms to maximize efficiency and reduce heat loss. The device supports a typical gate charge of 98 nanocoulombs at 8 V gate-source voltage for fast switching.

Maximum power dissipation is rated at 170 watts ensuring robust performance under heavy loads. Operating temperature ranges from minus 55 degrees Celsius to a maximum of 175 degrees Celsius for reliability in harsh environments.

The TO-263 package provides surface mount capability ideal for compact power circuits. The MOSFET is qualified according to JEDEC standards assuring quality and performance consistency. It is tailored for use in power management applications requiring efficient switching below the 55 V threshold.

Pin count is 3, suitable for typical gate, drain, and source connections. Explore more Infineon MOSFET devices and power semiconductors at EnvMart, your trusted industrial electronics partner.