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| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 1.75mm |
| Length | 4.9mm |
| Model | IRF7469TRPBF |
| Width | 3.9mm |
| Mount Type | Surface |
| Series | HEXFET |
| Maximum Operating Temperature | 175°C |
| Package Type | SO-8 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Channel Type | Type N |
| Maximum Continuous Drain Current Id | 9A |
| Maximum Drain Source Voltage Vds | 40V |
| Maximum Drain Source Resistance Rds | 21mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 2.5W |
| Typical Gate Charge Qg @ Vgs | 39nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.2V |
Infineon IRF7469TRPBF HEXFET Type N-Channel MOSFET is a high-performance, surface-mounted transistor designed for switching and amplification applications. It supports a maximum continuous drain current of 9 amperes and a drain-source voltage rating of 40 volts, operating with enhancement mode control.
This MOSFET package is the compact SO-8 type with eight pins, ideal for dense printed circuit board layouts. Its ultra-low gate impedance and minimal RDS(on) resistance improve efficiency by reducing switching losses and heat generation during operation.
The device can safely dissipate 2.5 watts of power, making it suitable for medium-duty power management in industrial and commercial electronic systems. It reliably functions over a wide temperature range from -55°C to 175°C, supporting robust use in demanding environments.
Key electrical characteristics include a typical gate charge of 39 nanocoulombs at gate-source voltage and a forward voltage of 1.2 volts. The maximum gate-source voltage rating is 20 volts, allowing flexible design parameters for various control circuits.
Physically, the MOSFET’s dimensions are 4.9 millimeters in length, 3.9 millimeters in width, and 1.75 millimeters in height, facilitating integration in compact electronic assemblies.
This N-channel HEXFET MOSFET is commonly used in power supply units, motor control circuits, amplification stages, and industrial switching applications where efficiency and compactness are critical.
This MOSFET features extremely low gate impedance for optimal switching efficiency. It provides very low RDS(on) resistance, minimizing power losses. Designed for surface mount in a compact SO-8 package with 8 pins. It operates in enhancement mode and supports a maximum gate-source voltage of 20V.
This device dissipates up to 2.5W maximum power with operation between -55°C to 175°C temperatures. The typical gate charge is 39nC at Vgs, enabling fast switching. The MOSFET is well-suited for power management, amplification, and switching applications.
Physical dimensions are 4.9mm length, 3.9mm width, and 1.75mm height for PCB design integration. This product is new and compliant with industrial standards without specific automotive certification. Usage includes industrial electronics, power supplies, and embedded system designs.
Explore EnvMart’s comprehensive selection of semiconductor devices and power MOSFETs for your next industrial or commercial electronics project.
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