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Infineon HEXFET Type N-Channel MOSFET 9A 40V Enhancement Mode 8-Pin SO-8 IRF7469TRPBF

Category MOSFET Brand Infineon Condition New

Specifications

Country of Origin India
Brand Infineon
Height 1.75mm
Length 4.9mm
Model IRF7469TRPBF
Width 3.9mm
Mount Type Surface
Series HEXFET
Maximum Operating Temperature 175°C
Package Type SO-8
Minimum Operating Temperature -55°C
Pin Count 8
Channel Type Type N
Maximum Continuous Drain Current Id 9A
Maximum Drain Source Voltage Vds 40V
Maximum Drain Source Resistance Rds 21mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 2.5W
Typical Gate Charge Qg @ Vgs 39nC
Maximum Gate Source Voltage Vgs 20V
Forward Voltage Vf 1.2V

Key Features

  • This MOSFET features extremely low gate impedance for optimal switching efficiency.
  • It provides very low RDS(on) resistance, minimizing power losses.
  • Designed for surface mount in a compact SO-8 package with 8 pins.
  • It operates in enhancement mode and supports a maximum gate-source voltage of 20V.
  • This device dissipates up to 2.5W maximum power with operation between -55°C to 175°C temperatures.
  • The typical gate charge is 39nC at Vgs, enabling fast switching.
  • The MOSFET is well-suited for power management, amplification, and switching applications.
  • Physical dimensions are 4.9mm length, 3.9mm width, and 1.75mm height for PCB design integration.

Product Description

Infineon IRF7469TRPBF HEXFET Type N-Channel MOSFET is a high-performance, surface-mounted transistor designed for switching and amplification applications. It supports a maximum continuous drain current of 9 amperes and a drain-source voltage rating of 40 volts, operating with enhancement mode control.

This MOSFET package is the compact SO-8 type with eight pins, ideal for dense printed circuit board layouts. Its ultra-low gate impedance and minimal RDS(on) resistance improve efficiency by reducing switching losses and heat generation during operation.

The device can safely dissipate 2.5 watts of power, making it suitable for medium-duty power management in industrial and commercial electronic systems. It reliably functions over a wide temperature range from -55°C to 175°C, supporting robust use in demanding environments.

Key electrical characteristics include a typical gate charge of 39 nanocoulombs at gate-source voltage and a forward voltage of 1.2 volts. The maximum gate-source voltage rating is 20 volts, allowing flexible design parameters for various control circuits.

Physically, the MOSFET’s dimensions are 4.9 millimeters in length, 3.9 millimeters in width, and 1.75 millimeters in height, facilitating integration in compact electronic assemblies.

This N-channel HEXFET MOSFET is commonly used in power supply units, motor control circuits, amplification stages, and industrial switching applications where efficiency and compactness are critical.

This MOSFET features extremely low gate impedance for optimal switching efficiency. It provides very low RDS(on) resistance, minimizing power losses. Designed for surface mount in a compact SO-8 package with 8 pins. It operates in enhancement mode and supports a maximum gate-source voltage of 20V.

This device dissipates up to 2.5W maximum power with operation between -55°C to 175°C temperatures. The typical gate charge is 39nC at Vgs, enabling fast switching. The MOSFET is well-suited for power management, amplification, and switching applications.

Physical dimensions are 4.9mm length, 3.9mm width, and 1.75mm height for PCB design integration. This product is new and compliant with industrial standards without specific automotive certification. Usage includes industrial electronics, power supplies, and embedded system designs.

Explore EnvMart’s comprehensive selection of semiconductor devices and power MOSFETs for your next industrial or commercial electronics project.

Infineon HEXFET Type N-Channel MOSFET 9A 40V Enhancement Mode 8-Pin SO-8 IRF7469TRPBF
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Frequently Asked Questions

The maximum continuous drain current for this model is 9 amperes.

This N-channel MOSFET has a maximum drain-source voltage rating of 40 volts.

The physical dimensions are 4.9mm in length, 3.9mm in width, and 1.75mm in height.

It can dissipate up to 2.5 watts of power.

The typical gate charge at gate-source voltage is 39 nanocoulombs.

The maximum gate-source voltage supported by this MOSFET is 20 volts.

It operates within a temperature range of -55°C to 175°C.

This device is packaged in a compact SO-8 type with 8 pins.

The channel type of this model is N-channel.

The maximum drain-source resistance (RDS(on)) is 21 milliohms.

It is commonly used in power supply units, motor control circuits, amplification stages, and industrial switching applications.

The forward voltage of this MOSFET is 1.2 volts.

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