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onsemi SuperFET II Type N-Channel MOSFET 20 A 600 V Enhancement 3-Pin TO-220 FCPF190N60

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onsemi SuperFET II Type N-Channel MOSFET 20 A 600 V Enhancement 3-Pin TO-220 FCPF190N60

Name: onsemi SuperFET II Type N-Channel MOSFET 20 A 600 V Enhancement 3-Pin TO-220 FCPF190N60
Brand: onsemi
SKU: 109339

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Category MOSFET Brand onsemi Condition New

Specifications

Country of Origin	India
Brand	onsemi
Height	16.07mm
Length	10.36mm
Model	FCPF190N60
Width	4.9mm
Mount Type	Through Hole
Series	SuperFET II
Maximum Operating Temperature	150°C
Package Type	TO-220
Minimum Operating Temperature	-55°C
Pin Count	3
Channel Type	Type N
Maximum Continuous Drain Current Id	20A
Maximum Drain Source Voltage Vds	600V
Maximum Drain Source Resistance Rds	170mΩ
Channel Mode	Enhancement
Maximum Power Dissipation Pd	39W
Typical Gate Charge Qg @ Vgs	57nC
Maximum Gate Source Voltage Vgs	30V
Forward Voltage Vf	1.2V

Key Features

This MOSFET supports a maximum continuous drain current of 20 A.
It withstands a maximum drain-source voltage of 600 V.
The device uses enhancement mode channel operation for switching applications.
The maximum drain-source resistance is 170 milliohms, delivering low conduction losses.
It dissipates up to 39 W of power safely at operating temperatures up to 150°C.
The package type is TO-220 enabling through-hole mounting for durable installations.
Typical gate charge is 57 nC at gate-source voltage of 30 V for optimized switching speed.
Dimensionally, it measures approximately 16.07 mm height, 10.36 mm length, and 4.9 mm width.

Product Description

onsemi FCPF190N60 SuperFET II Type N-Channel MOSFET offers reliable high-voltage, high-current switching with a continuous drain current rating of 20 A and a drain-source voltage rating of 600 V. Packaged in a 3-pin TO-220 form factor, it is designed for robust through-hole mounting.

Employing advanced SuperFET II technology from Fairchild Semiconductor, this MOSFET leverages charge balance technology to deliver efficient heat dissipation and low Rds(on) of 170 milliohms. The enhancement mode channel ensures precise switching control.

Typical gate charge of 57 nC at Vgs of 30 V facilitates fast switching speeds, contributing to improved system efficiency in applications such as AC-DC power supplies, servers, telecom equipment, industrial power supplies, UPS systems, solar energy inverters, and lighting solutions.

The device operates safely within a temperature range from -55°C to a maximum of 150°C and can dissipate up to 39 watts of power, supporting high power density system designs. Physical dimensions of 16.07 mm height, 10.36 mm length, and 4.9 mm width facilitate integration into compact PCBs.

This MOSFET delivers best-in-class robust body diode performance and reliability, making it suitable for demanding industrial and commercial switching applications. It is a through-hole mounted discrete semiconductor component intended for use where durability and system reliability are critical.

This MOSFET supports a maximum continuous drain current of 20 A. It withstands a maximum drain-source voltage of 600 V. The device uses enhancement mode channel operation for switching applications. The maximum drain-source resistance is 170 milliohms, delivering low conduction losses.

It dissipates up to 39 W of power safely at operating temperatures up to 150°C. The package type is TO-220 enabling through-hole mounting for durable installations. Typical gate charge is 57 nC at gate-source voltage of 30 V for optimized switching speed.

Dimensionally, it measures approximately 16.07 mm height, 10.36 mm length, and 4.9 mm width. The product is designed for industrial power electronics, including server power supplies and solar inverters. Explore the range of semiconductors and discrete components in the Electronics & Electricals category at EnvMart for more industrial-grade power switching solutions.