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Infineon HEXFET Type N-Channel MOSFET, 9.7 A, 100 V Enhancement Mode, Surface Mount 3-Pin TO-263 IRF520NSTRLPBF

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Infineon HEXFET Type N-Channel MOSFET, 9.7 A, 100 V Enhancement Mode, Surface Mount 3-Pin TO-263 IRF520NSTRLPBF

Name: Infineon HEXFET Type N-Channel MOSFET, 9.7 A, 100 V Enhancement Mode, Surface Mount 3-Pin TO-263 IRF520NSTRLPBF
Brand: Infineon
SKU: 108215
Price: 0.74 USD
Availability: InStock

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Category MOSFET Brand Infineon Condition New

Specifications

Country of Origin	China
Brand	Infineon
Height	4.83mm
Length	10.67mm
Model	IRF520NSTRLPBF
Width	9.65mm
Mount Type	Surface
Series	HEXFET
Maximum Operating Temperature	175°C
Package Type	TO-263
Minimum Operating Temperature	-55°C
Pin Count	3
Channel Type	Type N
Maximum Continuous Drain Current Id	9.7A
Maximum Drain Source Voltage Vds	100V
Maximum Drain Source Resistance Rds	200mΩ
Channel Mode	Enhancement
Maximum Power Dissipation Pd	48W
Typical Gate Charge Qg @ Vgs	25nC
Maximum Gate Source Voltage Vgs	20V
Forward Voltage Vf	1.3V

Key Features

Low on-resistance enhances energy efficiency.
High maximum continuous drain current of 9.7 A.
Surface mount TO-263 package allows compact PCB layouts.
Enhancement mode operation enables fast and reliable switching.
Maximum power dissipation of 48 W ensures thermal stability.
Operates between -55°C and 175°C for harsh environments.
Typical gate charge of 25 nC supports rapid switching.
Maximum gate-source voltage rating is 20 V.

Product Description

Infineon IRF520NSTRLPBF HEXFET Type N-Channel MOSFET is engineered for high-performance switching and amplification tasks. Featuring a maximum continuous drain current of 9.7 A and a maximum drain-source voltage of 100 V, this enhancement mode MOSFET ensures reliable operation in demanding industrial and commercial applications.

The device comes in a surface mount TO-263 package with a compact 3-pin configuration, allowing for efficient PCB space utilization and compatibility with automated assembly processes. The low on-resistance characteristic significantly reduces conduction losses, improving overall energy efficiency.

This MOSFET sustains a maximum power dissipation of 48 W and operates over a wide temperature range from -55°C to +175°C, making it suitable for harsh environments encountered in automotive, automation, and renewable energy systems. The typical gate charge of 25 nC enables fast switching speeds critical in PWM control and DC-DC converters.

Applications include power management systems, motor control circuits, automation controls requiring rapid switching responses, solar inverters, and audio amplification for enhanced sound quality. Its forward voltage of 1.3 V and maximum gate-source voltage of 20 V ensure stable electrical performance and durability.

The compact form factor with dimensions of 10.67 mm length, 9.65 mm width and 4.83 mm height supports high-density circuit designs without compromising thermal or electrical resilience.

Low on-resistance for improved energy efficiency. High 9.7 A drain current capacity for robust applications. Surface mount TO-263 package suitable for compact PCB layouts. Enhancement mode for effective switching control.

Maximum power dissipation of 48 W with thermal stability. Wide operating temperature range from -55°C to +175°C. Fast switching speed aided by 25 nC gate charge. 20 V maximum gate-source voltage protection. Use in power management, motor controls, and renewable energy systems.

Compact device size for versatile mounting options.

Infineon MOSFETs are widely trusted in electronics for enabling efficient power conversion and control. Explore more Semiconductor and MOSFET components on EnvMart for your industrial and laboratory requirements.