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ROHM Type N-Channel MOSFET 12 A, 600 V Enhancement, 3-Pin TO-220FM R6012JNXC7G
Specifications
| Country of Origin | India |
|---|---|
| Brand | ROHM |
| Height | 16.27mm |
| Length | 10.3mm |
| Model | R6012JNXC7G |
| Width | 5mm |
| Mount Type | Through Hole |
| Series | R6012JNX |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220FM |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | Type N |
| Maximum Continuous Drain Current Id | 12A |
| Maximum Drain Source Voltage Vds | 600V |
| Maximum Drain Source Resistance Rds | 390mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 60W |
| Typical Gate Charge Qg @ Vgs | 28nC |
| Maximum Gate Source Voltage Vgs | 30V |
Key Features
- Operates with a maximum drain source resistance (Rds) of 390 milliohms.
- Designed for fast switching applications with low on-resistance.
- Capable of 60 W maximum power dissipation for efficient thermal management.
- Supports gate voltage up to 30 V and typical gate charge of 28 nC at Vgs.
- Has a wide operating temperature range from -55°C to 150°C for demanding environments.
- Compliant with Pb-free plating and RoHS standards ensuring environmentally friendly manufacturing.
- Mount type is through hole for robust PCB attachment in power electronics designs.
- Compact dimensions with 16.27 mm height, 10.3 mm length, and 5 mm width enhance PCB space utilization.
Product Description
ROHM R6012JNXC7G is a Type N-Channel MOSFET designed for power switching applications requiring high current and voltage handling capabilities.
This device delivers a maximum continuous drain current of 12 A and can withstand a maximum drain source voltage of 600 V, making it suitable for demanding industrial and power management systems.
Housed in a TO-220FM 3-Pin package, it features a low on-resistance of 390 mΩ, enabling efficient switching with minimal power loss and fast reverse recovery time, which is critical for performance in high-frequency switching circuits.
The MOSFET supports a maximum power dissipation of 60 W and operates reliably across a wide temperature range from -55°C to 150°C, ensuring durability and stability in harsh operating conditions.
Its typical gate charge is 28 nC at the gate-source voltage, with a maximum gate voltage rating of 30 V, allowing for simple and efficient drive circuitry design. Installation is facilitated by through-hole mounting, providing secure mechanical and electrical connections on printed circuit boards.
The product complies with RoHS standards and features lead-free plating, underscoring its suitability for environmentally conscious applications. This MOSFET is ideal for use in industrial power control, power supplies, motor drives, and other electronic systems requiring reliable high-power switching components.
Operates with a maximum drain source resistance (Rds) of 390 milliohms. Designed for fast switching applications with low on-resistance. Capable of 60 W maximum power dissipation for efficient thermal management. Supports gate voltage up to 30 V and typical gate charge of 28 nC at Vgs.
Has a wide operating temperature range from -55°C to 150°C for demanding environments. Compliant with Pb-free plating and RoHS standards ensuring environmentally friendly manufacturing. Mount type is through hole for robust PCB attachment in power electronics designs.
Compact dimensions with 16.27 mm height, 10.3 mm length, and 5 mm width enhance PCB space utilization. Ideal for industrial, power supply, motor control, and switching applications. Browse the ROHM MOSFET range and related semiconductor products on EnvMart for more power electronic solutions.
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Frequently Asked Questions
The maximum continuous drain current for this model is 12 A.
This MOSFET can withstand a maximum drain-source voltage of 600 V.
It operates with a maximum drain-source resistance (Rds) of 390 milliohms.
The typical gate charge at gate-source voltage (Vgs) is 28 nC.
It is capable of a maximum power dissipation of 60 W.
The MOSFET operates reliably across a wide temperature range from -55°C to 150°C.
This model features a through-hole mounting type for secure PCB attachment.
The dimensions are 16.27 mm in height, 10.3 mm in length, and 5 mm in width.
The maximum gate-source voltage (Vgs) is rated at 30 V.
It is housed in a TO-220FM 3-Pin package.
Yes, it is compliant with RoHS standards and features lead-free plating.
This MOSFET is ideal for industrial power control, power supplies, motor drives, and other electronic systems requiring high-power switching.
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