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Toshiba TK Type N-Channel MOSFET 42A 120V Enhancement 3-Pin TO-220 TK42A12N1,S4X(S

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Toshiba TK Type N-Channel MOSFET 42A 120V Enhancement 3-Pin TO-220 TK42A12N1,S4X(S

Name: Toshiba TK Type N-Channel MOSFET 42A 120V Enhancement 3-Pin TO-220 TK42A12N1,S4X(S
Brand: Toshiba
SKU: 108026
Price: 2.69 USD
Availability: InStock

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Category MOSFET Brand Toshiba Condition New

Specifications

Country of Origin	China
Brand	Toshiba
Height	15mm
Length	10mm
Model	TK42A12N1,S4X(S
Width	4.5mm
Mount Type	Through Hole
Series	TK
Maximum Operating Temperature	150°C
Package Type	TO-220
Pin Count	3
Channel Type	Type N
Maximum Continuous Drain Current Id	42A
Maximum Drain Source Voltage Vds	120V
Maximum Drain Source Resistance Rds	9.4mΩ
Channel Mode	Enhancement
Maximum Power Dissipation Pd	35W
Typical Gate Charge Qg @ Vgs	52nC
Maximum Gate Source Voltage Vgs	20V
Forward Voltage Vf	-1.7V

Key Features

This MOSFET features an enhancement type N-channel for improved switching applications.
Maximum continuous drain current is rated at 42 amperes.
The maximum drain-source voltage withstands up to 120 volts.
Maximum power dissipation is 35 watts for efficient thermal management.
Pin count is 3 with through-hole mounting type for ease of assembly.
Package type is TO-220, providing robust mechanical and thermal properties.
Typical gate charge at Vgs is 52 nanoCoulombs.
Maximum gate source voltage is 20 volts ensuring gate reliability.

Product Description

Toshiba TK42A12N1,S4X(S is a high-performance N-Channel MOSFET designed for power and switching electronic applications. This discrete semiconductor device features a robust TO-220 package with 3 pins, making it suitable for through-hole mounting in various industrial circuits.

This MOSFET supports a maximum continuous drain current of 42 amperes and can withstand a maximum drain-source voltage (Vds) of 120 volts, enabling it to handle demanding load conditions efficiently. The device operates in enhancement mode, with a maximum gate-source voltage of 20 volts.

Thermal management is supported by a maximum power dissipation of 35 watts, sufficient for many power electronics tasks. The maximum drain-source resistance (Rds) of 9.4 milliohms ensures low conduction losses and improved efficiency in switching operations.

The typical gate charge (Qg) at Vgs is 52 nanoCoulombs, which helps in reducing switching losses. The forward voltage of -1.7 volts supports optimized conduction characteristics. With an operating temperature up to 150°C, this MOSFET is durable for industrial, laboratory, and manufacturing setups that require reliable power switching components.

This transistor is manufactured in China and conforms to no special automotive or industrial approvals but is suitable for general discrete semiconductor applications, including power electronics and driver circuits.

This MOSFET supports high current ratings of 42A for power handling. Package type TO-220 allows easy mounting and effective heat dissipation. 3-pin configuration simplifies integration in PCB designs. Maximum operating temperature of 150°C assures reliability in harsh environments.

Enhancement mode N-channel device optimizes switching efficiency. Low Rds(on) of 9.4 mΩ minimizes resistive losses. Forward voltage and gate charge values contribute to efficient power management.

Explore Toshiba MOSFETs and related discrete semiconductor components for your electronic designs and industrial manufacturing needs on EnvMart. Our catalog offers extensive options for various power and switching applications.