Toshiba Type N-Channel MOSFET 200 mA 60 V 3-Pin SOT-23 Surface Mount T2N7002AK T2N7002AK,LM(T

The Toshiba T2N7002AK is a silicon-based Type N-Channel MOSFET designed for high-speed switching applications. It is housed in a small 3-pin SOT-23 surface mount package with dimensions approximately 2.4 mm length, 2.9 mm width, and 0.8 mm height, making it suitable for compact electronic devices and designs requiring efficient power switching capabilities.

This MOSFET supports a maximum continuous drain current of 200 mA and a maximum drain-source voltage of 60 V, allowing it to operate effectively in low to medium voltage power electronics circuits. Its low maximum drain-source resistance of 3.2 mΩ delivers improved conduction efficiency.

The device has a maximum power dissipation rating of 1 W and operates reliably across a wide temperature range from -55°C up to 150°C, enabling use in industrial, automotive (not automotive certified), electronic consumer, and telecommunications equipment, where compact and reliable MOSFETs are required.

Key electrical characteristics include a typical gate charge of 0.27 nC at Vgs, which facilitates high-frequency switching with minimal losses, and a gate-source voltage tolerance of up to 20 V. The forward voltage is -0.87 V, optimizing power efficiency during conduction phases.

Its surface mount package type supports automated PCB assembly lines, contributing to efficient manufacturing processes in electronic component production. While this MOSFET does not have specific automotive certifications, its robust specifications make it suitable for various electronics applications in industrial, laboratory, telecommunications, and consumer electronics sectors.

Rated maximum continuous drain current of 200 mA. Rated maximum drain-source voltage of 60 V. Low Rds(on) ensures higher efficiency and less heat generation. Compact 3-Pin SOT-23 package for space saving PCB designs. Wide operating temperature range (-55°C to 150°C) for durability.

Maximum power dissipation capability is 1 watt. Typical gate charge is low at 0.27 nC for fast switching. High maximum gate-source voltage of 20 V for flexible drive signals. Forward voltage approximately -0.87 V for efficient conduction.

Surface mount type for modern assembly techniques. Set includes 1 piece Toshiba T2N7002AK MOSFET.

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